Composition- and temperature-dependent thermodynamic properties of the Cd, Ge‖Se, Te system, containing CdSe1–х Te х solid solutions
Source abstract
Abstract
The 298-K isothermal section through the phase diagram of the Cd, Ge‖Se, Te system is mapped out and the direction of the stable diagonal CdSe–CdTe is determined using thermodynamic analysis and data for the constituent binary systems CdSe–GeSe2, CdSe–CdTe, and CdTe–GeTe, in combination with X-ray diffraction and emf measurements. Data are presented on the thermodynamic properties of CdSe1–х Te х solid solutions as functions of composition and temperature. The Gibbs free energy of formation of the CdSe1–х Te х solid solutions is evaluated as a function of composition in the temperature range 300–1400 K using thermodynamic calculations. The composition dependence of the energy of mixing for CdSe1–х Te х is shown to have a negative deviation from ideality in the range x ≈ 0.2–0.6 at temperatures from 1000 to 1400 K. The contributions of each component of the CdSe1–х Te х solid solutions to their partial excess thermodynamic functions of mixing are estimated and the interaction parameter of their components in the solid and liquid states has been evaluated. The band gap of alloys in the CdSe–CdTe system is calculated as a function of composition and temperature.
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OpenAlex topics: Chalcogenide Semiconductor Thin Films · Advanced Semiconductor Detectors and Materials · nanoparticles nucleation surface interactions
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