Structural Perfection of PbTe Films Doped with Indium during Growth on Si Substrates
Source abstract
Abstract
Pb1 - yIn y Te films doped during growth are produced by a modified hot-wall method. According to x-ray diffraction and electron microscopy data, the films withytot 0.014 consist of two (PbTe + InTe) or three (PbTe + InTe + In2Te3) phases. The 583-K indium solubility in PbTe is determined in the ternary system Pb-In-Te. The results indicate that two pseudobinary joins, PbTe-InTe and PbTe-In2Te3 , must be examined in assessing the In solubility in PbTe.
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Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Advanced Semiconductor Detectors and Materials
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References (17)
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