Crystal growth of ZnSe1 −x S x solid solutions at the lowest possible vapor pressure
Source abstract
Abstract
We have developed a procedure for the crystal growth of ZnSe1 − x S x solid solutions from the vapor phase at p min, which makes it possible to reproducibly grow partially faceted, large-block crystals at temperatures below the wurtzite-sphalerite phase transition (1020°C) at a rate of at least 0.04 mm/h at a temperature of 945°C.
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Solid State Laser Technologies · Quantum Dots Synthesis And Properties
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References (15)
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