Structural perfection of heteroepitaxial silicon layers grown on sapphire by sublimation-source molecular beam epitaxy
Source abstract
Abstract
Structurally perfect, single-crystal silicon layers have been grown on $$(1\overline 1 02)$$ sapphire by sublimation-source molecular beam epitaxy. Electron and x-ray diffraction data demonstrate that silicon-on-sapphire epitaxy occurs at substrate temperatures from 550 to 850°C. As the thickness of the layers decreases from 1.0 to 0.2 μm, their structural perfection degrades. In the layers grown at 600°C, the density of nucleation sites in the initial stages of growth is ≃ 5 × 109 cm−2.
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Research context
OpenAlex topics: Silicon and Solar Cell Technologies · Semiconductor Quantum Structures and Devices · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (11)
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