Photoelectric Properties of MnSi Films
Source abstract
Abstract
The spectral response and photoconductivity decay kinetics of polycrystalline MnSi films grown on single-crystal Si were studied. The films were found to be photosensitive at shorter wavelengths in comparison with single-crystal MnSi. The results suggest that MnSi films are potential candidates for use in high-speed device structures.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and interfaces · Chalcogenide Semiconductor Thin Films · Surface and Thin Film Phenomena
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (16)
Show source-provided references
1. Zaitsev, V.K., Rakhimov, K.A., and Engalychev, A.E., Higher Manganese Silicide: Material for Thermoelectric Converters, Geliotekhnika, 1983, no. 3, pp. 15–17.
2. Adambaev, K. and Kamilov, T.S., Effect of Silicide Films on the Photoelectric Properties of Mn-Doped Silicon, Vsesoyuznasya konferentsiya po fotoelektricheskim yavleniyam v poluprovodnikakh (All-Union Conf. on Photoelectric Phenomena in Semiconductors), Tashkent, 1989, p. 585.
3. Kamilov, T.S., Klechkovskay, V.V., and Adambaev, K., Electron Diffraction Study of Manganese Silicide Films on Silicon, XII Eur. Crystallographic Meet., Moscow, 1989, vol. 1, p. 355.
4. Zaitsev, V.K. and Ordin, S.V., Optical Properties of the Higher Manganese Silicide, Fiz. Tverd. Tela (Leningrad), 1979, vol. 21, no. 8, pp. 2517–2520.
5. Adambaev, K., Zaitsev, V.K., Ordin, S.V., et al., Mn Distribution in the Surface Layer of Silicon Diffusion-Doped with Mn, Poverkhnost, 1988, no. 7, pp. 66–70.
6. Adambaev, K., Il'khamov, R.A., and Nazarov, T., Formation of Manganese Silicides on Silicon, in Issledovaniya po fizike tverdogo tela i materialovedeniyu (Solid-State Physics and Materials Research), Tashkent, 1988, pp. 23–25.
7. Yoshida, M., Yamanaka, K., and Hamanama, Y., Semiconducting and Dielectric Properties of c-Axis Oriented SbSi Thin Fulms, Jpn. J. Appl. Phys., Part 2, 1975, vol. 12, no. 11, pp. 1699–1705.10.1143/JJAP.12.1699 ↗
8. Jin-ichi Matsono and Morio Inova, Crystal Growth and Orientation of Vacuum Deposited Films of CdTe, Jpn. J. Appl. Phys., 1967, vol. 6, no. 3, pp. 297–304.10.1143/JJAP.6.297 ↗
9. Petrov, B.K., Kornfel'd, I.N., and Vladimirova, L.N., Cobalt Silicide Based Metal-Semiconductor Contacts, in Fizika i tekhnologiya materialov elektronnoi tekhniki (Physics and Technology of Electronic Materials), Voronezh: Voronezh. Politekh. Inst., 1992, pp. 32–39.
10. Adambaev, K. and Yakubov, K.R., Structure of the Interfacial Region in the Manganese Silicide-Silicon System, in Fizika tverdogo tela (Solid-State Physics), Tashkent, 1997, pp. 22–25.
11. Astrova, E.V., Lebedev, A.A., et al., Photosensitivity of the Porous Silicon-Silicon Heterojunction, Fiz. Tekh. Pluprovodn. (S.-Peterburg), 1997, vol. 31, no. 2, pp. 159–161.
12. Shashkov, Yu.M., Metallurgiya poluprovodnikov (Semiconductor Metallurgy), Moscow: Metallurgizdat, 1960, p. 14.
13. Voronkova, E.M. et al., Opticheskie materialy dlya infrakrasnoi tekhniki (Optical Materials for Infrared Applications), Moscow: Nauka, 1965.
14. Pavlov, L.P., Metody izmereniya parametrov poluprovodnikovykh materialov (Semiconductor Characterization Techniques), Moscow: Vysshaya Shkola, 1987, 2nd ed., pp. 133–138.
15. Erofeev, Yu.N., Impul'snaya tekhnika (Pulse Technology), Moscow: Vysshaya Shkola, 1984, pp. 25–28.
16. Ovechkin, Yu.A., Poluprovodnikovye pribory (Semiconductor Devices), Moscow: Vysshaya Shkola, 1979, pp. 37–40.