A model for calculating the composition of GaAs x P1–x solid solutions under metalorganic vapor phase epitaxy conditions
Source abstract
Abstract
A model is proposed for calculating the composition of GaAs x P1–x solid solutions, based on the iterative determination of the equilibrium partial pressures of the pyrolysis products of the starting reagents, followed by calculation of the composition of the solid solution in an adsorption–desorption model. The proposed model ensures good agreement between calculation results and experimental data.
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Research context
OpenAlex topics: Semiconductor materials and interfaces · Semiconductor Quantum Structures and Devices · Surface and Thin Film Phenomena
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References (20)
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