Silicon carbide transport during carbothermic reduction of SiO2: Thermodynamic evaluation and experimental study
Source abstract
Abstract
Mass-transfer processes during the high-temperature carbothermic reduction of silicon dioxide have been studied using thermodynamic modeling. The chemical vapor transport of silicon carbide has been investigated using SiO2 + xSiC mixtures—major reaction products in the SiO2-C system—as examples. Thermodynamic modeling results indicate that the vapor transport of silicon carbide is possible at temperatures from 1300 to 1500°C, and that the major gaseous species involved are Si and CO. Vapor transport processes have been studied experimentally. It is shown that the thermal reaction between carbon monoxide and silicon leads not only to direct conversion of silicon particles to silicon carbide but also to the growth of silicon oxycarbide fibers. The synthesized material has been characterized by x-ray diffraction and high-resolution optical microscopy.
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Research context
OpenAlex topics: Advanced ceramic materials synthesis · Advanced materials and composites · Silicon Carbide Semiconductor Technologies
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References (14)
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