Double‐ended passivator enables dark‐current‐suppressed colloidal quantum dot photodiodes for CMOS‐integrated infrared imagers
Source abstract
Abstract
Abstract Lead sulfide (PbS) colloidal quantum dot (CQD) photodiodes integrated with silicon‐based readout integrated circuits (ROICs) offer a promising solution for the next‐generation short‐wave infrared (SWIR) imaging technology. Despite their potential, large‐size CQD photodiodes pose a challenge due to high dark currents resulting from surface states on non‐passivated (100) facets and trap states generated by CQD fusion. In this work, we present a novel approach to address this issue by introducing double‐ended ligands that supplementally passivate (100) facets of halide‐capped large‐size CQDs, leading to suppressed bandtail states and reduced defect concentration. Our results demonstrate that the dark current density is highly suppressed by about an order of magnitude to 9.6 nA cm−2 at −10 mV, which is among the lowest reported for PbS CQD photodiodes. Furthermore, the performance of the photodiodes is exemplary, yielding an external quantum efficiency of 50.8% (which corresponds to a responsivity of 0.532 A W−1) and a specific detectivity of 2.5 × 1012 Jones at 1300 nm. By integrating CQD photodiodes with CMOS ROICs, the CQD imager provides high‐resolution (640 × 512) SWIR imaging for infrared penetration and material discrimination. image
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Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Advanced Semiconductor Detectors and Materials · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan the People's Republic of China
Wenzhou Advanced Manufacturing Technology Institute Huazhong University of Science and Technology Wenzhou the People's Republic of China
School of Physics and Electronic Engineering Hubei University of Arts and Science Xiangyang the People's Republic of China
School of Integrated Circuits Huazhong University of Science and Technology Wuhan the People's Republic of China
School of Engineering Physics Shenzhen Technology University Shenzhen the People's Republic of China
Optics Valley Laboratory Wuhan the People's Republic of China
Shenzhen Huazhong University of Science and Technology Research Institute Shenzhen the People's Republic of China
Funding
National Natural Science Foundation of China · National Key Research and Development Program of China · China Postdoctoral Science Foundation
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