Post-Sputtering Heat Treatments of Molybdenum on Silicon Wafer
Source abstract
Abstract
This paper investigated the property evolutions of Mo thin films that were subjected to post-sputtering heat treatments from 700 °C to 1100 °C. It was found that, after annealing, the use of Si wafers eliminated crack formations found in previously reported Mo thin films sputtered on fused silica substrates. The recrystallization of the Mo thin film was found to start at 900 °C, which led to rearrangements of the preferred crystalline orientation and enhancement of grain size when the annealing temperature was further increased. The electrical conductivity of the Mo thin films was majorly affected by the increase of Mo crystallite size as the annealing temperature was increased. Overall, the improvement of material sustainability and compatibility in the high temperature annealing process has made it positive to implement a Mo-Si contact-substrate scheme for vertical structured Si QDs solar cells.
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Research context
OpenAlex topics: Semiconductor materials and interfaces · Chalcogenide Semiconductor Thin Films · Silicon and Solar Cell Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Materials Science & Engineering, Jiangsu Collaborative Innovation Center of Photovoltaic Science & Engineering, Jiangsu Province Cultivation Base for State Key Laboratory of Photovoltaic Science and Technology, Changzhou University, Changzhou 213164, China
School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Building H6, Tyree Energy Technologies Building, Kensington, NSW 2052, Australia
Now at École Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Rue de la Maladière 71b, 2000 Neuchâtel, Switzerland
School of Engineering, Macquarie University, Sydney, NSW 2109, Australia
References (21)
Show source-provided references
1. Si nanocrystal p-i-n diodes fabricated on quartz substrates for third generation solar cell applications10.1063/1.3240882 ↗
2. Impacts of post-metallisation processes on the electrical and photovoltaic properties of si quantum dot solar cells10.1007/s11671-010-9707-x ↗
3. Lin, Z., Perez-Wurfl, I., Wu, L., Jia, X., Zhang, T., Puthen-Veettil, B., Zhang, H., Di, D., and Conibeer, G. (2013, January 25). Investigation in feasibility of molybdenum as a back contact layer for silicon based quantum dot solar cells. Proceedings of the SPIE 8620, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II, San Francisco, CA, USA.10.1117/12.2003504 ↗
4. Boron doped Si rich oxide/SiO2 and silicon rich nitride/sinx bilayers on molybdenum-fused silica substrates for vertically structured si quantum dot solar cells10.1063/1.4927514 ↗
5. 19·9%-efficient Zno/Cds/CuInGaSe2 solar cell with 81·2% fill factor10.1002/pip.822 ↗
6. Sputtered molybdenum bilayer back contact for copper indium diselenide-based polycrystalline thin-film solar cells10.1016/0040-6090(94)06462-8 ↗
7. Low-resistivity mo thin films prepared by evaporation onto 30 cm × 30 cm glass substrates
8. Structural and electrical properties of DC sputtered molybdenum films10.1016/S0927-0248(97)00236-5 ↗
9. Electrical, morphological and structural properties of rf magnetron sputtered mo thin films for application in thin film photovoltaic solar cells10.1007/s10853-011-5404-0 ↗
10. Annealing effect in structural and electrical properties of sputtered mo thin film10.1016/j.apsusc.2014.08.154 ↗
11. The effect of thermal annealing of mo film on the cuinse2 layer texture and device performance10.1016/j.solmat.2013.06.039 ↗
12. Rapid annealing of reactively sputtered precursors for Cu2ZnSns4 solar cells10.1002/pip.2265 ↗
13. Committee, A.I.H. (1990). Properties and Selection: Nonferrous Alloys and Special-Purpose Materials, ASM International. [10th ed.].
14. Strain energy release maximization model for evolution of recrystallization textures10.1016/S0020-7403(99)00095-8 ↗
15. X-ray studies of SnO2 prepared by chemical vapour deposition10.1016/0040-6090(86)90356-1 ↗
16. Structure and grain boundary defects of recrystallized silicon films prepared from amorphus silicon deposited using disilane10.1063/1.358827 ↗
17. Resistivity and structure of evaporated polycrystalline molybdenum films10.1016/0040-6090(80)90033-4 ↗
18. The fermi surface areas of chromium, molybdenum and tungsten10.1016/0022-3697(62)90246-9 ↗
19. Electrical resistivity model for polycrystalline films: The case of specular reflection at external surfaces10.1063/1.1652680 ↗
20. The validity of matthiessen’s rule for metallic films10.1016/0040-6090(75)90285-0 ↗
21. Philipp, M. (2018, August 01). Electrical Transport and Scattering Mechanisms in Thin Silver Films for Thermally Insulating Glazing. Available online: http://tud.qucosa.de/landing-page/?tx_dlf[id]=http%3A%2F%2Ftud.qucosa.de%2Fapi%2Fqucosa%253A24607%2Fmets.