A Review of Germanium-Antimony-Telluride Phase Change Materials for Non-Volatile Memories and Optical Modulators
Source abstract
Abstract
Chalcogenide phase change materials based on germanium-antimony-tellurides (GST-PCMs) have shown outstanding properties in non-volatile memory (NVM) technologies due to their high write and read speeds, reversible phase transition, high degree of scalability, low power consumption, good data retention, and multi-level storage capability. However, GST-based PCMs have shown recent promise in other domains, such as in spatial light modulation, beam steering, and neuromorphic computing. This paper reviews the progress in GST-based PCMs and methods for improving the performance within the context of new applications that have come to light in recent years.
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Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Advanced Memory and Neural Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electro-Optics and Photonics, University of Dayton, Dayton, OH 45469, USA
Department of Physics, University of Dayton, Dayton, OH 45469, USA
Funding
National Science Foundation
References (100+)
Show source-provided references
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