Influence of rapid thermal annealing and illumination on conduction mechanisms and resistive switching behavior of sol–gel-derived SrBi₄Ti₄O₁₅ RRAM devices
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OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Transition Metal Oxide Nanomaterials
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References (24)
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1. I.G. Baek, D.C. Kim, M.J. Lee, H.-J. Kim, E.K. Yim, M. S. Lee, J.E. Lee, S.E. Ahn, S. Seo, J.H. Lee, J.C. Park, Y.K. Cha, S.O. Park, H.S. Kim, I.K. Yoo, U.I. Chung, J.T. Moon and B.I. Ryu, Multi-layer cross-point binary oxide resistive memory (OxRRAM) for Post-NAND Storage Application. IEEE International Electron Devices Meeting, pp. 750–753 (2005)10.1109/IEDM.2005.1609462 ↗
2. T.C. Chang, K.C. Chang, T.M. Tsai, T.J. Chu, S.M. Sze, Resistance random access memory. Mater. Today 19(5), 254–264 (2016)10.1016/j.mattod.2015.11.009 ↗
3. M. Yamada, N. Tokuriki, S. Nakagawa, Magnetization reversal process of DyFeCo films under an addition of mechanical stress for application of MRAM. J. Magn. Magn. Mater. 310(2), 2618–2620 (2007)10.1016/j.jmmm.2006.11.046 ↗
4. H.Y. Zhang, Y. Cheng, M. Tang, X.R. Chen, G.F. Ji, First-principles study of structural, elastic, electronic and thermodynamic properties of topological insulator Sb2Te3 under pressure. Comput. Mater. Sci. 96, 342–347 (2015)10.1016/j.commatsci.2014.09.045 ↗
5. L. Li, T.J. Dai, K. Liu, K.C. Chang, R. Zhang, X. Lin, H.J. Liu, Y.C. Lai, T.P. Kuo, Achieving complementary resistive switching and multi-bit storage goals by modulating the dual-ion reaction through supercritical fluid-assisted ammoniation. Nanoscale 13, 14035–14040 (2021)10.1039/D1NR03356E ↗
6. L. Li, K.C. Chang, R. Zhang, X. Lin, Y.C. Lai, T.P. Kuo, Variable-temperature activation energy extraction to clarify the physical and chemical mechanisms of the resistive switching process. Nanoscale 12, 15721–15724 (2020)10.1039/D0NR04053C ↗
7. L. Li, K.C. Chang, C. Ye, X. Lin, R. Zhang, Z. Xu, W. Xiong, Y. Zhou, T.P. Kuo, An indirect way to achieve comprehensive performance improvement of resistive memory: when hafnium meets ITO in electrode. Nanoscale 12, 3267–3272 (2020)10.1039/C9NR08943H ↗
8. K.C. Chang, T.J. Dai, L. Li, X.N. Lin, S.D. Zhang, Y.C. Lai, H.J. Liu, Y.E. Syu, Unveiling the influence of surrounding materials and realization of multi-level storage in resistive switching memory. Nanoscale 12, 22070–22074 (2020)10.1039/D0NR05900E ↗
9. K.C. Chang, R. Zhang, T.C. Chang, T.M. Tsai, T.J. Chu, H.L. Chen, C.C. Shih, C.H. Pan, Y.T. Su, P.J. Wu, et al. High performance, excellent reliability multifunctional graphene oxide doped memristor achieved by self-protective compliance current structure. In Proceedings of the IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 15–17; pp. 33–34 (2014)
10. C. Ye, Z. Xu, K.C. Chang, L. Li, X.N. Lin, R. Zhang, Y. Zhou, W. Xiong, T.P. Kuo, Hafnium nanocrystals observed in a HfTiO compound film bring about excellent performance of flexible selectors in memory integration. Nanoscale 11, 20792–20796 (2019)10.1039/C9NR07470H ↗
11. G.W. Burr, R.M. Shelby, A. Sebastian, S. Kim, S. Kim, S. Sidler et al., Neuromorphic computing using non-volatile memory. Adv. Phys. X 2(1), 89–124 (2017). https://doi.org/10.1080/23746149.2016.125958510.1080/23746149.2016.1259585 ↗
12. A.D. Kent, D.C. Worledge, A new spin on magnetic memories. Nat. Nanotechnol. 10, 187–191 (2015). https://doi.org/10.1038/nnano.2015.2410.1038/nnano.2015.24 ↗
13. S. Raoux, W. Welnic, D. Ielmini, Phase change materials and their application to nonvolatile memories. MRS Bull. 37(2), 118–123 (2012). https://doi.org/10.1557/mrs.2012.710.1557/mrs.2012.7 ↗
14. N. Setter, D. Damjanovic, L. Eng, G. Fox, S. Gevorgian, S. Hong et al., Ferroelectric thin films: review of materials, properties, and applications. J. Appl. Phys. 100(5), 051606 (2006). https://doi.org/10.1063/1.233699910.1063/1.2336999 ↗
15. H.-S.P. Wong, H.-Y. Lee, S. Yu, Y.-S. Chen, Y. Wu, P.-S. Chen, B. Lee, F.T. Chen, M.-J. Tsai, Metal–oxide RRAM. Proc. IEEE 100(6), 1951–1970 (2012). https://doi.org/10.1109/JPROC.2012.219036910.1109/JPROC.2012.2190369 ↗
16. K.-H. Chen et al., Investigation of electron transport layer influence on asymmetric bipolar switching in transparent BST-based RRAM devices. Micromachines 16(11), 1302 (2025)10.3390/mi16111302 ↗
17. Y.-C. Wang et al., Bipolar switching properties and reaction decay effect of BST ferroelectric thin films for applications in resistance random access memory devices. Nanomaterials 15(8), 602 (2025)10.3390/nano15080602 ↗
18. K.-H. Chen et al., Study of the characteristics of Ba0. 6Sr0. 4Ti1-xMnxO3-film resistance random access memory devices. Micromachines 15(9), 1143 (2024)10.3390/mi15091143 ↗
19. K.-H. Chen, S. Wu, S.-J. Huang, Dielectric characteristics investigation of (Ba0. 7Sr0. 3)(Ti0. 9Zr0. 1) O3 ferroelectric thin films. Integr. Ferroelectr. 168(1), 18–24 (2016)10.1080/10584587.2016.1158088 ↗
20. K.-H. Chen, C.-M. Cheng, N.-F. Wang, H.-W. Hung, C.-Y. Li, S. Wu, First order rate law analysis for reset state in vanadium oxide thin film resistive random access memory devices. Nanomaterials 13, 198 (2023). https://doi.org/10.3390/nano1301019810.3390/nano13010198 ↗
21. T.-M. Tsai, K.-C. Chang, T.-C. Chang, R. Zhang, T. Wang, C.-H. Pan, K.-H. Chen, H.-M. Chen, M.-C. Chen, Y.-T. Tseng et al., Resistive switching mechanism of oxygen-rich indium tin oxide resistance random access memory. IEEE Electron Device Lett. 37, 408–411 (2016). https://doi.org/10.1109/LED.2016.253288310.1109/LED.2016.2532883 ↗
22. R. Zhang, T.-F. Young, M.-C. Chen, H.-L. Chen, S.-P. Liang, Y.-E. Syu, S.M. Sze, K.-C. Chang, T.-C. Chang, T.-M. Tsai et al., Characterization of oxygen accumulation in indium-tin-oxide for resistance random access memory. IEEE Electron Device Lett. 35, 630–632 (2014). https://doi.org/10.1109/LED.2014.231680610.1109/LED.2014.2316806 ↗
23. K.C. Chang, T.C. Chang, T.M. Tsai, R. Zhang, Y.C. Hung, Y.E. Syu, Y.F. Chang, M.C. Chen, T.J. Chu, H.L. Chen et al., Physical and chemical mechanisms in oxide-based resistance random access memory. Nano Rev. 10, 120 (2015)
24. K.-H. Chen et al., Activation energy and bipolar switching properties for the co-sputtering of ITOX: SiO2 thin films on resistive random access memory devices. Nanomaterials 13.15, 2179 (2023)10.3390/nano13152179 ↗