Preparation of graphene doped PVA/n-Si (MPS) Schottky diodes at different ratios and investigation of their electrical properties
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OpenAlex topics: Semiconductor materials and interfaces · Nanowire Synthesis and Applications · Silicon Nanostructures and Photoluminescence
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References (39)
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1. S.M. Sze, ve, K.N. Kwok, (2007). Physics of semiconductor devices (3 nd ed.). New Jersey: John Wiley & Sons, 154–300
2. G. Ersöz, İ. Yücedağ, S. Bayrakdar, Ş. Altındal, A. Gümüş, Investigation of photo-induced effect on electrical properties of Au/PPy/n-Si (MPS) type Schottky barrier diodes. J. Mater. Sci. : Mater. Electron. 28(9), 6413–6420 (2017). https://doi.org/10.1007/s10854-016-6326-z10.1007/s10854-016-6326-z ↗
3. G. Greco, Di S. Franco, C. Bongiorno, E. Grzanka, M. Leszczynski, F. Giannazzo, F. Roccaforte, Thermal annealing effect on electrical and structural properties of Tungsten Carbide Schottky contacts on AlGaN/GaN heterostructures. Semicod Sci. Technol. 35(10), 105004 (2020). https://doi.org/10.1088/1361-6641/aba28810.1088/1361-6641/aba288 ↗
4. A.K. Singh, A.D.D. Dwivedi, P. Chakrabarti, R. Prakash, Electronic and optical properties of electrochemically polymerized polycarbazole/aluminum Schottky diodes. J. Appl. Phys. 105(11), 114506 (2009). https://doi.org/10.1063/1.313927710.1063/1.3139277 ↗
5. S. Çetinkaya, H.A. Çetinkara, S. Kahraman, F. Bayansal, Characterization of Al/n-ZnO/p-Si/Al structure with low-cost solution-grown ZnO layer. Philos. Mag Lett. 93(9), 550–559 (2013). https://doi.org/10.1080/09500839.2013.82719910.1080/09500839.2013.827199 ↗
6. A.F. Özdemir, A. Gök, A. Türüt, The electrical measurements in poly(2-chloroaniline) based thin film sandwich devices. Thin Solid Films. 515(18), 7253–7258 (2007). https://doi.org/10.1016/j.tsf.2007.02.10410.1016/j.tsf.2007.02.104 ↗
7. Ş. Altındal, T. Tunç, H. Tecimer, İ. Yücedağ, Electrical and photovoltaic properties of Au/(Ni, Zn)-doped PVA/n-Si structures in dark and under 250 W illumination level. Mat. Sci. Semicond. Process. 28, 48–53 (2014). https://doi.org/10.1016/j.mssp.2014.05.00710.1016/j.mssp.2014.05.007 ↗
8. N. Baraz, İ. Yücedağ, Y. Azizian-Kalandaragh, Ş. Altındal, Determining electrical and dielectric parameters of dependence as function of frequencies in Al/ZnS-PVA/p-Si (MPS) structures. J. Mater. Sci. : Mater. Electron. 28(2), 1315–1321 (2017). https://doi.org/10.1007/s10854-016-5660-410.1007/s10854-016-5660-4 ↗
9. Y. Zhou, C. Liu, S. Fan, Schottky contact of an artificial polymer semiconductor composed of poly(dimethylsiloxane) and multiwall carbon nanotubes. J. Mater. Chem. A 3, 3195–3199 (2015). https://doi.org/10.1039/C4TA06166E10.1039/C4TA06166E ↗
10. V.R. Reddy, Electrical properties of Au/polyvinylidene fluoride/n-InP Schottky diode with polymer interlayer. Thin Solid Films. 556, 300–306 (2014). https://doi.org/10.1016/j.tsf.2014.01.03610.1016/j.tsf.2014.01.036 ↗
11. P.R.S. Reddy, V. Janardhanam, I. Jyothi, S.H. Yuk, V.R. Reddy, J.C. Jeong, S.N. Lee, C.J. Choi, Modification of Schottky barrier properties of Ti/p-type InP Schottky diode by polyaniline (PANI) organic interlayer. J. Semicond. Tech. Sci. 16(5), 664–674 (2016). https://doi.org/10.5573/JSTS.2016.16.5.66410.5573/JSTS.2016.16.5.664 ↗
12. S. Altındal-Yerişkin, M. Balbaşı, İ. Orak, The effects of (graphene doped-PVA) interlayer on the determinative electrical parameters of the Au/n-Si (MS) structures at room temperature. J. Mater. Sci. : Mater. Electron. 28(18), 14040–14048 (2017). https://doi.org/10.1007/s10854-017-7255-110.1007/s10854-017-7255-1 ↗
13. E.A. Akhlaghi, Y. Badali, S. Altındal, Y. Azizian-Kalandaragh, Preparation of mixed copper/PVA nanocomposites as an interface layer for fabrication of Al/Cu-PVA/p-Si Schottky structures. Phys. B-Condens Matter. 546, 93–98 (2018). https://doi.org/10.1016/j.physb.2018.06.01910.1016/j.physb.2018.06.019 ↗
14. M. Gökçen, T. Tunç, Ş. Altındal, I. Uslu, The effect of PVA (Bi2O3- doped) interfacial layer and series resistance on electrical characteristics of Au/n-Si (110) Schottky barrier diods (SBDs). Curr. Appl. Phys. 12(2), 525–530 (2012). https://doi.org/10.1016/j.cap.2011.08.01210.1016/j.cap.2011.08.012 ↗
15. C.V.S. Reddy, X. Han, Q.Y. Zhu, L.Q. Mai, W. Chen, Dielectric spectroscopy studies on (PVP + PVA) polyblend film. Microelectron. Eng. 83(2), 281–285 (2006). https://doi.org/10.1016/j.mee.2005.08.01010.1016/j.mee.2005.08.010 ↗
16. V.R. Reddy, V. Manjunath, V. Janardhanam, Y. Kil, C.J. Choi, Electrical properties and current transport mechanisms of the Au/n-GaN Schottky structure with solution-processed high-k BaTiO3 interlayer. J. Electron. Mater. 43(9), 3499–3507 (2014). https://doi.org/10.1007/s11664-014-3177-310.1007/s11664-014-3177-3 ↗
17. A. Büyükbaş-Uluşan, S. Altındal-Yerişkin, A. Tataroğlu, M. Balbaşı, Y.A. Kalandaragh, Electrical and impedance properties of MPS structure based on (Cu2O–CuO–PVA) interfacial layer. J. Mater. Sci. : Mater. Electron. 29(10), 8234–8243 (2018). https://doi.org/10.1007/s10854-018-8830-910.1007/s10854-018-8830-9 ↗
18. E.E. Tanrıkulu, Ş. Altındal, Y. Azizian–Kalandaragh, Preparation of (CuS-PVA) interlayer and the investigation their structural, morphological and optical properties and frequency dependent electrical characteristics of Au/(CuS-PVA)/n-Si (MPS) structures. J. Mater. Sci. : Mater. Electron. 29(14), 11801–11811 (2018). https://doi.org/10.1007/s10854-018-9280-010.1007/s10854-018-9280-0 ↗
19. H. Uslu, Ş. Altındal, T. Tunç, İ. Uslu, T.S. Mammadov, The illumination intensity and applied bias voltage on dielectric properties of au/polyvinyl alcohol (Co, Zn-doped)/n‐Si Schottky barrier diodes. J. Appl. Poly Sci. 120(1), 322–328 (2011). https://doi.org/10.1002/app.3313110.1002/app.33131 ↗
20. O. Çiçek, S.O. Tan, H. Tecimer, S. ve Altındal, Role of graphene-doped organic/polymer nanocomposites on the electronic properties of schottky junction structures for photocell applications. J. Electron. Mater. 47(12), 7134–7142 (2018). https://doi.org/10.1007/s11664-018-6644-410.1007/s11664-018-6644-4 ↗
21. E.H. Nicollian, J.R. Brews, MOS (Metal oxide semiconductor) physics and technology, 1 edn. (Wiley, st ed.). New York, 1982), pp. 40–439
22. E.H. Rhoderick, ve R.H. Williams, Metal semiconductor contacts, 2 edn. (Oxford, nd ed.). Oxford, 1988), pp. 257–267
23. G. Bhattacharya, R. Hindoddikar, Adyam. V, Electron transport characteristics of photosensitive Al/ZnO/Pt Schottky junction fabricated on (002) oriented pulsed laser-deposited ZnO thin film. Phys. Status Solid A: Appl. Mater. Sci. 222(17), 2500280 (2025). https://doi.org/10.1002/pssa.20250028010.1002/pssa.202500280 ↗
24. S. Boughdachi, Y. Badali, Y. Azizian-Kalandaragh, Ş. Altındal, Current-transport mechanisms of the Al/(Bi₂S₃-PVA nanocomposite)/p-Si Schottky diodes in the temperature range between 220 K and 380 K. J. Electron. Mater. 47(12), 6945–6953 (2018). https://doi.org/10.1007/s11664-018-6593-y10.1007/s11664-018-6593-y ↗
25. G. Bhattacharya, A. Venimadhav, An alternative approach to extract diode parameters from metal–semiconductor–metal asymmetric Schottky diodes. J. Phys. D: Appl. Phys. 55(43), 435101 (2022). https://doi.org/10.1088/1361-6463/ac85ff10.1088/1361-6463/ac85ff ↗
26. G. Bhattacharya, A. Venimadhav, Temperature dependent electron transport and interface state studies on Ni/n-Si/Al/Ag lateral Schottky junction. Microelectronic Reliab. 153, 115302 (2024). https://doi.org/10.1016/j.microrel.2023.11530210.1016/j.microrel.2023.115302 ↗
27. L.L. Yang, M. Li, L. Yang, S. Li, M.L. Zhang, Z. Zhang, W.H. Tang, A synergistic postprocessing strategy for enhancing photoresponse performance of In/Ni/Ga₂O₃/In photodetector. IEEE Trans. Electron. Devices. 7(6), 3707–3712 (2026). https://doi.org/10.1109/TED.2026.368753510.1109/TED.2026.3687535 ↗
28. S. Lu, W. Tian, L. Gao, W. Shangguan, Z. Cao et al., High electron-affinity oxides intercalation for p-type contacts in 2D semiconductors. Nano Lett. 26(18), 6143–6151 (2026). https://doi.org/10.1021/acs.nanolett.6c0075910.1021/acs.nanolett.6c00759 ↗
29. Ç.Ş. Güçlü, M. Ulusoy, Ş. Altındal, A comparison electrical characteristics of the Au/(pure-PVA)/n-Si and Au/(CdTe doped-PVA)/n-Si (MPS) type Schottky structures using I-V and C-V measurements. J. Mater. Sci. :Mater Electron. 35, 880–891 (2024). https://doi.org/10.1007/s10854-024-12650-010.1007/s10854-024-12650-0 ↗
30. Ş. Altındal, A. Barkhordari, G. Pirgholi-Givi, M. Ulusoy, H. Mashayekhi, S. Özçelik, Y. Azizian-Kalandaragh, Comparasion of the electrical and impedance properties of Au/(ZnOMn: PVP)/n-Si (MPS) Schottky-diodes (SDs) befor end after gamma-irradiation. Phys. Scr. 96, 125881 (2021). https://doi.org/10.1088/1402-4896/ac43d710.1088/1402-4896/ac43d7 ↗
31. H. Norde, A modified forward I-V plot for Schottky diodes with high series resistance. J. Appl. Phys. 50(7), 5052–5053 (1979). https://doi.org/10.1063/1.32560710.1063/1.325607 ↗
32. S.K. Cheung, N.W. Cheung, Extraction of Schottky diode parameters from forward current-voltage characteristics. Appl. Phys. Lett. 49(2), 85–87 (1986). https://doi.org/10.1063/1.9735910.1063/1.97359 ↗
33. H.C. Card, E.H. Rhoderick, Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes. J. Phys. D: Appl. Phys. 4(10), 1589–1598 (1971). https://doi.org/10.1088/0022-3727/4/10/31910.1088/0022-3727/4/10/319 ↗
34. M. Soylu, The effect of thickness of organic layer on electronic properties of Al/Rhodamine B/p-Si Structure. Mater. Sci. Semicond. Process. 14, 212–218 (2011). https://doi.org/10.1016/j.mssp.2011.02.01810.1016/j.mssp.2011.02.018 ↗
35. R.M. Cibils, R.H. Buitrago, Forward I-V plot for nonideal Schottky diodes with high series resistance. J. Appl. Phys. 58, 1075–1077 (1985). https://doi.org/10.1063/1.33622210.1063/1.336222 ↗
36. G. Bhattacharya, N. Jadkar, N. Dihingia, V. Singh, A. Venimadhav, Current Transport Characteristics of Forming FreeAg/PVDF/Ag Bipolar Resistive Switching Devices. J. Appl. Poly Sci. 142(42), 1–8 (2025). https://doi.org/10.1002/app.5763110.1002/app.57631 ↗
37. E.E. Tanrıkulu, S. Demirezen, Ş. Altındal, İ. Uslu, Analysis of electrical characteristics and conduction mechanisms in the Al/(%7 Zn-doped PVA)/p-Si (MPS) structure at room temperature. J. Mater. Sci: Mater. Electron. 28, 8844–8856 (2017). https://doi.org/10.1007/s10854-017-6613-3J10.1007/s10854-017-6613-3J ↗
38. M. Gökçen, T. Tunc, Enhancement of dielectric characteristics of polyvinyl alcohol (PVA) interfacial layer in Au/PVA/n-Si structures by Bi2O3 disperse. Int. J. Ceram. Technol. 10(1), 64–69 (2013). https://doi.org/10.1111/ijac.1200910.1111/ijac.12009 ↗
39. S. Demirezen, M. Ulusoy, H. Durmuş, H. Çavuşoğlu, Y. Kurtuluş, Ş. Altındal, Electrical and photodetector characteristics of Schottky interlaid with P(EHA-co-AA) functional polymers by the iCVD method. ACS Omega. 8(49), 46499–46512 (2023). https://doi.org/10.1021/acsomega.3c0493510.1021/acsomega.3c04935 ↗