journal article·2026-06

Effect of aluminium on the phase change properties of Ge₂Sb₂Te₅ for memory applications

R. Kemparaju, Rohit, Akila Prabhudessai, M. Madesh Kumar, K. Ramesh

Applied Physics A· Volume 132· Issue 6
Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Chemical and Physical Properties of Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (69)

Show source-provided references
1. M. Schumacher, H. Weber, P. Jovari, Structural electronic and kinetic properties of the phase-change material Ge2Sb2Te5 in the liquid state. Sci. Rep. 6, 27434 (2016). https://doi.org/10.1038/srep2743410.1038/srep27434 ↗
2. E.M. Vinod, K. Ramesh, K.S. Sangunni, Structural transition and enhanced phase transition properties of Se doped Ge2Sb2Te5 alloys. Sci. Rep. 5, 063505 (2015). https://doi.org/10.1038/srep0805010.1038/srep08050 ↗
3. R. Shekhawat, V.E. Madhavan, K. Ramesh, Improved thermal stability and direct hexagonal transition accompanied by metal-insulator transition in arsenic substituted Ge2Sb2Te5. J. Alloys Compd. 910, 164897 (2022). https://doi.org/10.1016/j.jallcom.2022.16489710.1016/j.jallcom.2022.164897 ↗
4. G. Atwood, Phase-change materials for electronic memories. Science 321, 210–211 (2008). https://doi.org/10.1126/science.116023110.1126/science.1160231 ↗
5. Y. Zheng, W. Song, Z. Song, Y. Zhang, T. Xin, C. Liu, Y. Xue, S. Song, B. Liu, X. Lin, V.G. Kuznetsov, I.I. Tupitsyn, A.V. Kolobov, Y. Cheng, A complicated route from disorder to order in antimony tellurium binary phase change materials. Adv. Sci. 11, 1–9 (2024). https://doi.org/10.1002/advs.20230102110.1002/advs.202301021 ↗
6. S. Wintersteller, O. Yarema, D. Kumaar, F.M. Schenk, O.V. Safonova, P.M. Abdala, V. Wood, M. Yarema, Unravelling the amorphous structure and crystallization mechanism of GeTe phase change memory materials. Nat. Commun. 15, 1011 (2024). https://doi.org/10.1038/s41467-024-45327-710.1038/s41467-024-45327-7 ↗
7. R. De Bastiani, E. Carria, S. Gibilisco, A. Mio, C. Bongiorno, F. Piccinelli, M. Bettinelli, A.R. Pennisi, M.G. Grimaldi, E. Rimini, Crystallization of ion amorphized Ge2Sb2Te5 thin films in presence of cubic or hexagonal phase. J. Appl. Phys. 107, 113521 (2010). https://doi.org/10.1063/1.343763610.1063/1.3437636 ↗
8. R. Wang, Z. Wan, X. Zou, S. Chen, S. Song, X. Zhou, Z. Song, High thermal stability chalcogenide phase-change materials for embedded memory applications. Review of Materials Research 1, 100015 (2025). https://doi.org/10.1016/j.revmat.2025.10001510.1016/j.revmat.2025.100015 ↗
9. A. Redaelli, E. Petroni, R. Annunziata, Material and process engineering challenges in Ge-rich GST for embedded PCM. Mater. Sci. Semicond. Process. 137, 106184 (2022). https://doi.org/10.1016/j.mssp.2021.10618410.1016/j.mssp.2021.106184 ↗
10. C. Te Lie, P.C. Kuo, W.C. Hsu, T.H. Wu, P.W. Chen, S.C. Chen, Ge2Sb2Te5 thin film doped with silver. Jpn. J. Appl. Phys. 42, 1026–1028 (2003). https://doi.org/10.1143/jjap.42.102610.1143/jjap.42.1026 ↗
11. B. Prasai, G. Chen, D.A. Drabold, Direct ab-initio molecular dynamic study of ultrafast phase change in Ag-alloyed Ge2Sb2Te5. Appl. Phys. Lett. 102, 041907 (2013). https://doi.org/10.1063/1.478987710.1063/1.4789877 ↗
12. P. Singh, A.P. Singh, J. Sharma, A. Kumar, M. Mishra, G. Gupta, A. Thakur, A potential material for reversible near-infrared window. Phys. Rev. Appl. 10, 054070 (2018). https://doi.org/10.1103/PhysRevApplied.10.05407010.1103/PhysRevApplied.10.054070 ↗
13. G. Wang, X. Shen, Q. Nie, R. Wang, L. Wu, Y. Lv, F. Chen, J. Fu, S. Dai, J. Li, Improved thermal and electrical properties of Al-doped Ge2Sb2Te5 films for phase-change random access memory. J. Phys. D Appl. Phys. (2012). https://doi.org/10.1088/0022-3727/45/37/37530210.1088/0022-3727/45/37/375302 ↗
14. R. Kemparaju, A. Rohit, S. Prabhudesai, M. Charan Prasanth, K. Madesh kumar, Ramesh, Electrical Switching and Phase Change Properties of GeTe-Al2Te3 Chalcogenide Alloys. Ceram. Int. 51, 29046–29054 (2025)10.1016/j.ceramint.2025.04.110 ↗
15. S. Wei, J. Li, X. Wu, P. Zhou, S. Wang, Y. Zheng, L. Chen, F. Gan, X. Zhang, G. Li, Opt. Express 15, 10584–10590 (2007). https://doi.org/10.1364/OE.15.01058410.1364/OE.15.010584 ↗
16. J.-H. Seo, K.-H. Song, H.-Y. Lee, Crystallization behavior of amorphous Alx (Ge2Sb2Te5)1−x thin films. J. Appl. Phys. 108, 064515 (2010). https://doi.org/10.1063/1.347179910.1063/1.3471799 ↗
17. S. Sandhu, D. Singh, S. Kumar, R. Thangaraj, Phase analysis of aluminium modified GeSbTe bulk prepared from XRD of samples, International Conference on Condensed Matter and Applied Physics 1728 (2016) 020334. https://doi.org/10.1063/1.494638510.1063/1.4946385 ↗
18. M. Jigau, The chacolgenide based on Ge-Sb-Te doped with Aluminium. Physics AUC 27, 95–99 (2017)
19. K. Wang, D. Wamwangi, S. Ziegler, C. Steimer, M. Wuttig, Influence of Bi doping upon the phase change characteristics of Ge2Sb2Te5. J. Appl. Phys. 96, 5557 (2004). https://doi.org/10.1063/1.180361210.1063/1.1803612 ↗
20. I. Petr, A.A. Lazarenko, S.S. Sherchenkov, Y. Kozyukhin, Maxim, P. Shtern, Sergey, D.G. Timoshenkov, N. Gromov, Evgeniy, Redichev, Investigation of transport mechanisms in Bi doped Ge2Sb2Te5 thin films for phase change memory application, Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics (2014) 944006. https://doi.org/10.1117/12.218099910.1117/12.2180999 ↗
21. J.M. Skelton, A.R. Pallipurath, T.H. Lee, S.R. Elliott, Atomistic origin of the enhanced crystallization speed and n-type conductivity in Bi-doped Ge-Sb-Te phase-change materials. Adv. Funct. Mater. 24, 7291–7300 (2014). https://doi.org/10.1002/adfm.20140120210.1002/adfm.201401202 ↗
22. T.-J. Park, S.-Y. Choi, M.-J. Kang, Phase transition characteristics of Bi/Sn doped Ge2Sb2Te5 thin film for PRAM application. Thin Solid Films 515, 5049–5053 (2007). https://doi.org/10.1016/j.tsf.2006.10.04510.1016/j.tsf.2006.10.045 ↗
23. B. Wu, T. Wei, J. Hu, R. Wang, Q. Liu, M. Cheng, W. Li, Y. Ling, B. Liu, Thermal stability and high speed for optoelectronic hybrid phase-change memory based on Cr doped Ge2Sb2Te5 thin film. Ceram. Int. 49, 37837–37848 (2023). https://doi.org/10.1016/j.ceramint.2023.09.11210.1016/j.ceramint.2023.09.112 ↗
24. Q. Wang, B. Liu, Y. Xia, Y. Zheng, R. Huo, Q. Zhang, S. Song, Y. Cheng, Z. Song, S. Feng, Cr-doped Ge2Sb2Te5 for ultra-long data retention phase change memory. Appl. Phys. 22, 22101 (2015). https://doi.org/10.1063/1.493684710.1063/1.4936847 ↗
25. T. Fukushima, H. Katayama-Yoshida, K. Sato, H. Fujii, E. Rabel, R. Zeller, P.H. Dederichs, W. Zhang, R. Mazzarello, First-principles study of magnetic interactions in 3d transition metal-doped phase-change materials. Phys. Rev. B 90, 44417 (2014). https://doi.org/10.1103/PhysRevB.90.14441710.1103/PhysRevB.90.144417 ↗
26. K. Ding, K. Ren, F. Rao, Z. Song, L. Wu, B. Liu, S. Feng, Study on the Cu-doped Ge2Sb2Te5 for low-power phase change memory. Mater. Lett. 125, 143–146 (2014). https://doi.org/10.1016/j.matlet.2014.03.18010.1016/j.matlet.2014.03.180 ↗
27. Q. Gao, L. Chen, Effect of Cu doping on microstructure and thermal stability of Ge2Sb2Te5 thin film. Appl. Phys. A 125, 564 (2019). https://doi.org/10.1007/s00339-019-2865-510.1007/s00339-019-2865-5 ↗
28. Y. Lu, Z. Zhang, S. Song, X. Shen, G. Wang, L. Cheng, S. Dai, Z. Song, Performance improvement of Ge-Sb-Te material by GaSb doping for phase change memory. Appl. Phys. Lett. (24), 41907 (2013). https://doi.org/10.1063/1.480973510.1063/1.4809735 ↗
29. U.K. Neeru Bala, Manju, Goutam, Anup Thakur; Ga doping induced thermal stabilization of fcc phase in Ge2Sb2Te5 thin films: A step toward power-efficient phase change memories. J. Appl. Phys. 13, 135301 (2023). https://doi.org/10.1063/5.016733610.1063/5.0167336 ↗
30. N. Bala, A. Thakur, Ga doping induced structural and optical modification in Ge2Sb2Te5 thin films. J. Mater. Sci. Mater. Electron. 33, 14419–14425 (2022). https://doi.org/10.1007/s10854-022-08365-910.1007/s10854-022-08365-9 ↗
31. H.J. Shin, Y.-S. Kang, A. Benayad, K.-H. Kim, Y.M. Lee, M.-C. Jung, T.-Y. Lee, D.-S. Suh, K.H.P. Kim, C. Kim, Y. Khang, Effect of indium on phase-change characteristics and local chemical states of In–Ge–Sb–Te alloys. Appl. Phys. Lett. (2), 021905 (2008). https://doi.org/10.1063/1.295973010.1063/1.2959730 ↗
32. G. Singh, A. Kaura, M. Mukul, Theoretical and experimental investigations of the properties of Ge2Sb2Te5 and indium-doped Ge2Sb2Te5 phase change material. Appl. Phys. A Mater. Sci. Process. 117, 1307–1314 (2014). https://doi.org/10.1007/s00339-014-8542-910.1007/s00339-014-8542-9 ↗
33. P.D. Szkutnik, M. Aoukar, V. Todorova, L. Angelides, B. Pelissier, D. Jourde, P. Michallon, C. Vallee, P. Noe, Impact of In doping on GeTe phase-change materials thin films obtained by means of an innovative plasma enhanced metalorganic chemical vapor deposition process. J. Appl. Phys. 121, 105301 (2017). https://doi.org/10.1063/1.497802010.1063/1.4978020 ↗
34. K. Wang, C. Steimer, D. Wamwangi, Effect of indium doping on Ge2Sb2Te5 thin films for phase-change optical storage. Appl. Phys. A Mater. Sci. Process. 80, 1611–1616 (2005). https://doi.org/10.1007/s00339-005-3232-210.1007/s00339-005-3232-2 ↗
35. K. Wang, C. Steimer, D. Wamwangi, Influence of doping upon the phase change characteristics of Ge2Sb2Te5. Microsyst. Technol. 13, 203–206 (2007). https://doi.org/10.1007/s00542-006-0156-510.1007/s00542-006-0156-5 ↗
36. M.L. Lee, K.T. Yong, C.L. Gan, L.H. Ting, S. Bin Muhamad Daud, L.P. Shi, Crystallization and thermal stability of Sn-doped Ge2Sb2Te5 phase change material. J. Phys. D Appl. Phys. 41, 215402 (2008). https://doi.org/10.1088/0022-3727/41/21/21540210.1088/0022-3727/41/21/215402 ↗
37. N. Bai, F.R. Liu, X.X. Han, Z. Zhu, F. Liu, X. Lin, N.X. Sun, Effect of the Sn dopant on the crystallization of amorphous Ge2Sb2Te5 films induced by an excimer laser. Opt. Laser Technol. 74, 11–15 (2015). https://doi.org/10.1016/j.optlastec.2015.03.01910.1016/j.optlastec.2015.03.019 ↗
38. W.D. Song, L.P. Shi, X.S. Miao, T.C. Chong, Phase change behaviors of Sn-doped Ge–Sb–Te material. Appl. Phys. Lett. (9), 091904 (2007). https://doi.org/10.1063/1.247539010.1063/1.2475390 ↗
39. S.J. Wei, H.F. Zhu, K. Chen, D. Xu, J. Li, F.X. Gan, X. Zhang, Y.J. Xia, G.H. Li, Appl. Phys. Lett. 98, 231910 (2011). https://doi.org/10.1063/1.359761710.1063/1.3597617 ↗
40. Y. Hu, R. Zhang, T. Lai, X. Zhu, H. Zou, Z. Song, Simultaneously high thermal stability and low power based on Ti-doped Ge2Sb2Te5 thin films. ECS J. Solid State Sci. Technol. (12)(2017). https://doi.org/10.1149/2.0121712jss10.1149/2.0121712jss ↗
41. L. Cao, X. Ji, W. Zhu, Q. She, Y. Chen, Z. Hu, S. Guo, Z. Song, F. Rao, B. Qian, L. Wu, Advantage of Ti-doped Ge2Sb2Te5 material for phase change memory applications. ECS Solid State Lett. (12)(2015). https://doi.org/10.1149/2.0081512ssl10.1149/2.0081512ssl ↗
42. G. Wang, Q. Nie, X. Shen, R.P. Wang, L. Wu, J. Fu, T. Xu, S. Dai, Appl. Phys. Lett. 101(5), 051906 (2012). https://doi.org/10.1063/1.474214410.1063/1.4742144 ↗
43. R. Li, Y. Jiang, L. Xu, Z. Ma, F. Yang, J. Xu, W. Su, Enhanced threshold voltage of Zn-doped Ge2Sb2Te5 phase-change memory deposited by electron-beam evaporation. Phys Status Solidi A 210, 2650–2655 (2013). https://doi.org/10.1002/pssa.20132938110.1002/pssa.201329381 ↗
44. K. Ramesh, S. Asokan, E.S.R. Gopal, Chemical ordering and fragility minimum in Cu-As-Se glasses. J. Non-Cryst. Solids 352, 2905–2912 (2006). https://doi.org/10.1016/j.jnoncrysol.2006.03.07610.1016/j.jnoncrysol.2006.03.076 ↗
45. K. Ramesh Pumlianmunga, Electrical switching and aluminium speciation in Al-As-Te glasses. J. Non-Cryst. Solids 452, 253–258 (2016). https://doi.org/10.1016/jjnoncrysol.2016.09.00410.1016/jjnoncrysol.2016.09.004 ↗
46. J.Z. Liu, P.C. Taylor, The formal valence shell model for structure of amorphous semiconductors. J. Non-Cryst. Solids 114, 25–30 (1989). https://doi.org/10.1016/0022-3093(89)90057-410.1016/0022-3093(89)90057-4 ↗
47. P.S. Salmon, J. Liu, The coordination environment of Ag and Cu in ternary chalcogenide glasses. J. Non-Cryst. Solids 205–207, 172–175 (1996). https://doi.org/10.1016/S0022-3093(96)00225-610.1016/S0022-3093(96)00225-6 ↗
48. P.T. Wilson, S. Chahal, M. Pumlianmunga, K. Madesh Kumar, Ramesh, 27 Al MAS NMR investigations on Al23Te77 glass: observation of 5- coordinated Al and its influence on electrical switching. Solid State Commun. 293, 53–57 (2019). https://doi.org/10.1016/j.ssc.2019.02.00710.1016/j.ssc.2019.02.007 ↗
49. P.T. Wilson, R. Ramanna, S. Chahal, R. Shekhawat, M.M. Kumar, K. Ramesh, Local structure and electrical switching in Al20Te75X5 (X = Si, Ge, As, Sb) glasses. Appl. Phys. A 126, 1–8 (2020). https://doi.org/10.1007/s00339-020-03471-z10.1007/s00339-020-03471-z ↗
50. S. Murugavel, S. Asokan, Al coordination in bulk glasses from solid-state NMR. Phys. Rev. B 57, 33–36 (1998). https://doi.org/10.1103/PhysRevB.57.3310.1103/PhysRevB.57.33 ↗
51. K. Ramesh, Pumlianmunga, Electrical switching in Sb doped Al23Te77 glasses. J. Phys. Chem. Solid. 107, 68–74 (2017). https://doi.org/10.1016/j.jpcs.2017.03.01510.1016/j.jpcs.2017.03.015 ↗
52. Z. Zhang, C. Peng, S. Song, Z. Song, Y. Cheng, K. Ren, X. Li, F. Rao, B. Liu, S. Feng, Characterization of Cu doping on GeTe for phase change memory application. J. Appl. Phys. 114, 244311 (2013). https://doi.org/10.1063/1.485175710.1063/1.4851757 ↗
53. K. Ramesh, N. Ramesh Rao, K.S. Sangunni, E.S.R. Gopal, Electrical resistivity of Cu doped As-Se glasses at high pressure. Phys. Status Solidi B 235, 536–541 (2003). https://doi.org/10.1002/pssb.20030161710.1002/pssb.200301617 ↗
54. K. Ramesh, S. Asokan, E.S.R. Gopal, Electrical switching in germanium telluride glasses doped with Cu and Ag. Appl. Phys. A 69, 421–425 (1999). https://doi.org/10.1007/s00339990009710.1007/s003399900097 ↗
55. R. Lan, S.L. Otoo, P. Yuan, P. Wang, Y. Yuan, X. Jiang, Thermoelectric properties of Sn doped GeTe films. Appl. Surf. Sci. 507, 145025 (2020). https://doi.org/10.1016/j.apsusc.2019.14502510.1016/j.apsusc.2019.145025 ↗
56. B. Liu, Z. Song, T. Zhang, S. Feng, B. Chen, Effect of O-implantation on the structure and resistance of Ge2Sb2Te5 film. Appl. Surf. Sci. 242, 62–9 (2005). https://doi.org/10.1016/j.apsusc.2004.07.06110.1016/j.apsusc.2004.07.061 ↗
57. Y. Lai, B. Qiao, J. Feng, Nitrogen-doped Ge2Sb2Te5 films for nonvolatile memory. J. Electron. Mater. 34(2), 176–181 (2005). https://doi.org/10.1007/s11664-005-0230-210.1007/s11664-005-0230-2 ↗
58. X. Ji-Lin, L. Bo, S. Zhi-Tang, F. Song-Lin, C. Bomy, Electrical properties of Ag-doped Ge2Sb2Te5 films used for phase change random access memory. Chin. Phys. Lett. (4), 934 (2005). https://doi.org/10.1088/0256-307X/22/4/04310.1088/0256-307X/22/4/043 ↗
59. M. Xia, K. Ding, F. Rao, X. Li, L. Wu, Z. Song, Aluminum-centered tetrahedron-octahedron transition in advancing Al-Sb-Te phase change properties. Sci. Rep. 5, 8548 (2015). https://doi.org/10.1038/srep0854810.1038/srep08548 ↗
60. https://www.webelements.com/germanium/index.html
61. K. Ren, F. Rao, Z. Song, C. Peng, J. Li, L. Wu, B. Liu, S. Feng, Study on the thermal stability improvement of GeTe by Al doping. Appl. Phys. Lett. 103, 093111 (2013). https://doi.org/10.1063/1.481983910.1063/1.4819839 ↗
62. M. Kastner, D. Adler, H. Fritzsche, Valence-alternation model for localized gap states in lone-pair semiconductors. Phys. Rev. Lett. 37(22), 1504 (1976)10.1103/PhysRevLett.37.1504 ↗
63. D. Ielmini, Y. Zhang, (2007). Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices. J. Appl. Phys., 102(5)10.1063/1.2773688 ↗
64. S. Murugavel, S. Asokan, Composition dependence of electrical properties of Al–Te glasses. J. Non-Cryst. Solids. 249(2–3), 145–149 (1999)10.1016/S0022-3093(99)00315-4 ↗
65. J.C. Phillips, M.F. Thorpe, Constraint theory, vector percolation and glass formation. Solid State Commun. 53, 699–702 (1985)10.1016/0038-1098(85)90381-3 ↗
66. R.A. Narayanan, S. Asokan, A. Kumar, Evidence concerning the effect of topology on electrical switching in chalcogenide network glasses. Phys. Rev. B 54, 4413 (1996)10.1103/PhysRevB.54.4413 ↗
67. E.A. Davis, N.F. Mott, Conduction in non-crystalline systems V. Conductivity, optical absorption and photoconductivity in amorphous semiconductors. Philos. Mag. 22, 903–922 (1970). https://doi.org/10.1080/1478643700822106110.1080/14786437008221061 ↗
68. R. Shekhawat, H. Pamuluri, V. Erkkara Madhavan, K. Ramesh, Structural transformation and phase change properties of Se substituted GeTe. Sci. Rep. 11, 1–12 (2021). https://doi.org/10.1038/s41598-021-87206-x10.1038/s41598-021-87206-x ↗
69. L. Zhang, X. Mai, R. Gu, L. Liu, C. Xiong, Z. Yang, X. Miao, Three resistance states achieved by nanocrystalline decomposition in Ge-Ga‐Sb compound for multilevel phase change memory. Adv. Electron. Mater. 7(5), 2100164 (2021)10.1002/aelm.202100164 ↗