Effects of different growth systems on impurity characteristics in AlN crystals
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OpenAlex topics: GaN-based semiconductor devices and materials · Acoustic Wave Resonator Technologies · Ga2O3 and related materials
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References (38)
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1. J. Li, K.B. Nam, M.L. Nakarmi, P. Carrier, S.H. Wei et al., Band structure and fundamental optical transitions in wurtzite AlN. Appl. Phys. Lett. 83(25), 5163–5165 (2003)10.1063/1.1633965 ↗
2. H. Yamashita, K. Fukui, S. Misawa et al., Optical properties of AlN epitaxial thin films in the vacuum ultraviolet region. J. Appl. Phys. 50(2), 896–898 (1979)10.1063/1.326007 ↗
3. J.R. Grandusky, Z.B. Zhong, J. Chen et al., Manufacturability of high power ultraviolet-C light emitting diodes on bulk aluminum nitride substrates. Solid State Electron. 78, 127–130 (2012)10.1016/j.sse.2012.05.056 ↗
4. J.Q. Wu, When group-III nitrides go infrared: New properties and perspectives. J. Appl. Phys. 106, 011101 (2009)10.1063/1.3155798 ↗
5. R. Dalmau, H.S. Craft, J. Britt et al., High quality AlN single crystal substrates for AlGaN-based devices. Mater. Sci. Forum. 924, 923–926 (2018)10.4028/www.scientific.net/MSF.924.923 ↗
6. P. Reddy, M.H. Breckenridge, Q. Guo et al., High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates. Appl. Phys. Lett. 116, 081101 (2020)10.1063/1.5138127 ↗
7. R.X. Yu, G. Zhao, K. Jiang et al., Research on the Micromorphology of the Native Surface of 2-Inch Aluminum Nitride Single Crystals. Materials. 18(5), 1147 (2025)10.3390/ma18051147 ↗
8. Y. Taniyasu, M. Kasu, T. Makimoto, An aluminium nitride light-emitting diode with a wavelength of 210 nanometres. Nature. 441, 325–328 (2006)10.1038/nature04760 ↗
9. M. Kneissl, T.Y. Seong, J. Han et al., The emergence and prospects of deep-ultraviolet light-emitting diode technologies. Nat. Photonics. 13(4), 233–244 (2019)10.1038/s41566-019-0359-9 ↗
10. Y. Zhang, J.C. Zhang, Z.H. Liu et al., Demonstration of a 2 kV Al0.85Ga0.15N Schottky Barrier Diode With Improved On-Current and Ideality Factor. IEEE Electron Device Lett. 41(3), 457–460 (2020)10.1109/LED.2020.2967895 ↗
11. H.Q. Fu, I. Baranowski, X. Huang et al., Demonstration of AlN Schottky Barrier Diodes With Blocking Voltage Over 1 kV. IEEE Electron. Device Lett. 38(9), 1286–1289 (2017)10.1109/LED.2017.2723603 ↗
12. C. Caliendo, A. D’Amico, F.L. Castro, Lamb waves propagation along 3 C-SiC/AlN membranes for application in temperature-compensated, high-sensitivity gravimetric sensors. Sensors. 13, 550–564 (2013)10.3390/s130100550 ↗
13. K.X. Sun, B. Allard, S. Buchman et al., LED deep UV source for charge management of gravitational reference sensors. Class. Quantum Gravity. 23(8), S141–S150 (2006)10.1088/0264-9381/23/8/S19 ↗
14. S. Vilhunen, H. Särkkä, M. Sillanpää, Ultraviolet light-emitting diodes in water disinfection. Environ. Sci. Pollut. Res. 16, 439–442 (2009)10.1007/s11356-009-0103-y ↗
15. Z. Xu, B.M. Sadler, Ultraviolet communications: Potential and state-of-the-art. IEEE Commun. Mag. 46(5), 67–73 (2008)10.1109/MCOM.2008.4511651 ↗
16. M.S. Sun, J.F. Li, J.C. Zhang et al., The fabrication of AlN by hydride vapor phase epitaxy. J. Semicond. 40(12), 121803 (2019)10.1088/1674-4926/40/12/121803 ↗
17. T. Nagashima, R. Ishikawa, T. Hitomi et al., Homoepitaxial growth of AlN on a 2-in.-diameter AlN single crystal substrate by hydride vapor phase epitaxy. J. Cryst. Growth. 540, 125644 (2020)10.1016/j.jcrysgro.2020.125644 ↗
18. W.X. Yang, Y.K. Zhao, Y.Y. Wu et al., Deep-UV emission at 260 nm from MBE-grown AlGaN/AlN quantum-well structures. J. Cryst. Growth. 512, 213–218 (2019)10.1016/j.jcrysgro.2019.02.037 ↗
19. S. Matta, J.L. Brault, M. Korytov et al., Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE. J. Cryst. Growth. 499, 40–46 (2018)10.1016/j.jcrysgro.2018.07.023 ↗
20. B. Tanga, H. Hua, H. Wan et al., Growth of high-quality AlN films on sapphire substrate by introducing voids through growth-mode modification. Appl. Surf. Sci. 518, 146218 (2020)10.1016/j.apsusc.2020.146218 ↗
21. W.Z. Yao, F.Z. Li, L.S. Wang et al., Investigation of coherency stress-induced phase separation in AlN/AlxGa1–xN superlattices grown on sapphire substrates. Cryst. Eng. Comm. 22, 3198–3205 (2020)10.1039/D0CE00147C ↗
22. H. Miyake, C. Lin, K. Tokoro et al., Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing. J. Cryst. Growth. 456, 155–159 (2016)10.1016/j.jcrysgro.2016.08.028 ↗
23. Y. Mogami, S. Motegi, A. Osawa et al., Evolution of morphology and crystalline quality of DC-sputtered AlN films with high-temperature annealing. Jpn. J. Appl. Phys. 58, SC1029 (2019)10.7567/1347-4065/ab1066 ↗
24. C. Hartmann, A. Dittmar, J. Wollweber et al., Bulk AlN growth by physical vapour transpor. Semicond. Sci. Technol. 29(8), 084002 (2014)10.1088/0268-1242/29/8/084002 ↗
25. C. Hartmann, J. Wollweber, A. Dittmar et al., Preparation of Bulk AlN Seeds by Spontaneous Nucleation of Freestanding Crystals. Jpn. J. Appl. Phys. 52(8), 08JA06 (2013)10.7567/JJAP.52.08JA06 ↗
26. M. Bickermann, B. Epelbaum, A. Winnacker, Characterization of bulk AlN with low oxygen content. J. Cryst. Growth. 269(2–4), 432–442 (2004)10.1016/j.jcrysgro.2004.05.071 ↗
27. R. Collazo, J.Q. Xie, B.E. Gaddy et al., On the origin of the 265 nm absorption band in AlN bulk crystals. Appl. Phys. Lett. 100, 191914 (2012)10.1063/1.4717623 ↗
28. R.L. Xu, M.M. Rojo, S.M. Islam et al., Thermal conductivity of crystalline AlN and the influence of atomic-scale defects. J. Appl. Phys. 126(18), 185105 (2019)10.1063/1.5097172 ↗
29. R.X. Yu, W.H. Cao, Y.J. Zhu et al., The Mechanism of Spontaneous Nucleation of AlN and Its Application as Substrates in HEMTs. Appl. Phys. A 131, 354 (2025)10.1007/s00339-025-08445-7 ↗
30. D.Y. Fu, Q.K. Wang, G. Zhang et al., Modelling and simulation of oxygen transport during AlN crystal growth by the PVT method. J. Cryst. Growth. 551, 125902 (2020)10.1016/j.jcrysgro.2020.125902 ↗
31. D. Li, J.H. Edgar, Thermodynamic analysis of impurities in the sublimation growth of AlN single crystals. MRS Online Proceedings Library. 955, 0955-I11-05 (2006)10.1557/PROC-0955-I11-05 ↗
32. T. Mattila, R.M. Nieminenr, Ab initio study of oxygen point defects in GaAs, GaN, and AlN. Phys. Rev. B 54, 16676 (1996)10.1103/PhysRevB.54.16676 ↗
33. S.I. Mollik, M.E. Zvanu, Ultraviolet absorption of point defects in high purity bulk AlN. AIP Adv. 15, 045203 (2025)10.1063/5.0261981 ↗
34. X.G. Yao, B.G. Zhang, H.X. Hu et al., State-of-the-art and prospective progress of growing AlN substrates by physical vapor transport. J. Cryst. Growth. 617, 127276 (2023)10.1016/j.jcrysgro.2023.127276 ↗
35. O.V. Bonito, D. Mangelinck, S. Hagedorn et al., Silicon diffusion in AlN. J. Appl. Phys. 134, 095103 (2023)10.1063/5.0159641 ↗
36. M. Bickermann, O. Filip, B.M. Epelbaum et al., Growth of AlN bulk crystals on SiC seeds: Chemical analysis and crystal properties. J. Cryst. Growth. 339(1), 13–21 (2012)10.1016/j.jcrysgro.2011.11.043 ↗
37. G.A. Slack, T.F. McNelly, Ain single crystals. J. Cryst. Growth. 42, 560–563 (1977)10.1016/0022-0248(77)90246-9 ↗
38. C. Hartmann, J. Wollweber, A. Dittmar et al., Preparation of Bulk AlN Seeds by Spontaneous Nucleation of Freestanding Crystals. Jpn. J. Appl. Phys. 52, 08JA06 (2013)10.7567/JJAP.52.08JA06 ↗