journal article·2026-05

Evolution of silicon carbide microdamage under indenter size effect: A molecular dynamics study

Nanxing Wu, Liangyu Zhu, Jiani Yang, Dongling Yu, Xiaoling Zhou, Guoxing Tang

Applied Physics A· Volume 132· Issue 5
Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Advanced Surface Polishing Techniques · Metal and Thin Film Mechanics · Diamond and Carbon-based Materials Research

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (20)

Show source-provided references
1. W. Wu, Y. Hu, X. Meng et al., Molecular dynamics simulation of ion-implanted single-crystal 3 C-SiC nano-indentation[J]. J. Manuf. Process. 79, 356–368 (2022)10.1016/j.jmapro.2022.04.071 ↗
2. K. Yin, Y. Zhong, L. Shi et al., Atomic-scale deformation behavior of SiC polytypes using molecular dynamics simulation[J]. Mater. Today Commun. 41, 110406 (2024)10.1016/j.mtcomm.2024.110406 ↗
3. B. Zhu, D. Zhao, H. Zhao, A study of deformation behavior and phase transformation in 4H-SiC during nanoindentation process via molecular dynamics simulation[J]. Ceram. Int. 45(4), 5150–5157 (2019)10.1016/j.ceramint.2018.10.261 ↗
4. Y. Liu, Q. Wang, C. Lu et al., Microscopic residual stress evolution at the SiC/Al interface during nanoindentation via molecular dynamics simulation[J]. Surf. Interfaces. 33, 102210 (2022)10.1016/j.surfin.2022.102210 ↗
5. E.M. Sefene, C.C.A. Chen, Y.H. Tsai, A comprehensive review of diamond wire sawing process for single-crystal hard and brittle materials[J]. J. Manuf. Process. 131, 1466–1497 (2024)10.1016/j.jmapro.2024.09.093 ↗
6. Y. Gao, Y. Chen, P. Ge et al., Study on the subsurface microcrack damage depth in electroplated diamond wire saw slicing SiC crystal[J]. Ceram. Int. 44(18), 22927–22934 (2018)10.1016/j.ceramint.2018.09.088 ↗
7. B. Meng, D. Yuan, S. Xu, Atomic-Scale Characterization of Slip Deformation and Nanometric Machinability of Single-Crystal 6H-SiC[J]. Nanoscale Res. Lett. 14(1), 309 (2019)10.1186/s11671-019-3123-7 ↗
8. X. Chen, W. Zhou, X. Zhang et al., Mechanical properties of 6H-SiC irradiated by neutron and MeV heavy ions: A nanoindentation and finite element method study[J]. Journal of Applied PhySiCs, 2018, 123(2):025104.1-025104.7
9. P.C. Chen, W.C. Miao, T. Ahmed et al., Defect inspection techniques in SiC[J]. Nanoscale Res. Lett. 17(1), 30 (2022)10.1186/s11671-022-03672-w ↗
10. L.S. Stelzl, G. Hummer, Kinetics from replica exchange molecular dynamics simulations[J]. J. Chem. Theory Comput. 13(8), 3927–3935 (2017)10.1021/acs.jctc.7b00372 ↗
11. S. Sun, X. Peng, H. Xiang et al., Molecular dynamics simulation in single crystal 3 C-SiC under nanoindentation: Formation of prismatic loops[J]. Ceram. Int. 43(18), 16313–16318 (2017)10.1016/j.ceramint.2017.09.003 ↗
12. T. Fu, X. Peng, C. Wan et al., Molecular dynamics simulation of plasticity in VN (001) crystals under nanoindentation with a spherical indenter[J]. Appl. Surf. Sci. 392, 942–949 (2017)10.1016/j.apsusc.2016.09.130 ↗
13. Z. Ou, W. Wu, H. Dai, Molecular dynamics simulation-based study of single-crystal 3 C-SiC nano-indentation with water film. Appl. Phys. A 129, 658 (2023)10.1007/s00339-023-06929-y ↗
14. X. Li, G. Zeng, X. Lei, The stability, optical properties and solar-thermal conversion performance of SiC-MWCNTs hybrid nanofluids for the direct absorption solar collector (DASC) application[J]. Sol. Energy Mater. Sol. Cells. 206, 110323 (2020)10.1016/j.solmat.2019.110323 ↗
15. W. Wu, Y. Hu, X. Meng et al., Molecular dynamics simulation of ion-implanted single-crystal 3 C-SiC nano-indentation. J. Manuf. Process. 79, 356–368 (2022)10.1016/j.jmapro.2022.04.071 ↗
16. D. Yu, D. Liu, J. Yi, Y. Fang, N. Wu, Dislocation Analysis of Nanoindentation on Different Crystal Planes of 6H-SiC Based on Molecular Dynamics Simulation. Crystals 2022, 12, 1223
17. Y. Zhao, Q. Wu, T. Xun et al., A scalable, general purpose circuit model for vanadium compensated, semi-insulating, vertical 6H-SiC PCSS[J]. IEEE Trans. Circuits Syst. II Express Briefs. 68(3), 988–992 (2020)
18. A. Noreyan, J.G. Amar, I. Marinescu, Molecular dynamics simulations of nanoindentation of β-SiC with diamond indenter[J]. Mater. Sci. Engineering: B 117(3), 235–240 (2005)10.1016/j.mseb.2004.11.016 ↗
19. K. Mohammadi, A.A. Madadi, Z. Bajalan et al., Analysis of mechanical and thermal properties of carbon and silicon nanomaterials using a coarse-grained molecular dynamics method[J]. Int. J. Mech. Sci. 187, 106112 (2020)10.1016/j.ijmecsci.2020.106112 ↗
20. D. Yu, H. Zhang, J. Yi et al., Molecular dynamics analysis on the effect of grain size on the subsurface crack growth of friction nanocrystalline 6H-SiC[J]. CrystEngComm. 24(40), 7137–7148 (2022)10.1039/D2CE01181F ↗