journal article·2026-04

Parameterisation of interstitial iron-related defects in silicon wafers using injection-dependent lifetime spectroscopy

Mohamed MaoudJ, Djoudi Bouhafs

Applied Physics A· Volume 132· Issue 4
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OpenAlex topics: Silicon and Solar Cell Technologies · Semiconductor materials and devices · Thin-Film Transistor Technologies

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References (49)

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1. T.U. Nærland;, S. Bernardini, H. Haug, S. Grini, L. Vines, N. Stoddard, M. Bertoni, On the recombination centers of iron-gallium pairs in Ga-doped silicon. Appl. Phys. 122, 085703 (2017). https://doi.org/10.1063/1.500035810.1063/1.5000358 ↗
2. J.E. Birkholz, K. Bothe, D. Macdonald, J. Schmidt, Electronic properties of iron-boron pairs in crystalline silicon by temperature- and injection-level-dependent lifetime measurements. J. Appl. Phys. 97, 103708 (2005)10.1063/1.1897489 ↗
3. C. Möller, A. Laades, K. Lauer, Association of FeB pairs under illumination. Solid State Phenom. 205, 265 (2014). http://10.4028/www.scientific.net/SSP.205-206.265
4. D. Macdonald, A. Cuevas, Capture cross sections of the acceptor level of iron–boron pairs in p-type silicon by injection-level dependent lifetime measurements. J. Appl. Phys. 89, 7932 (2001)10.1063/1.1372156 ↗
5. Yan Zhu And Ziv Hameiri, Review of injection dependent charge carrier lifetime spectroscopy. Prog Energy. 3 012001 (2021). https://doi.org/10.1088/2516-1083/abd48810.1088/2516-1083/abd488 ↗
6. G. Coletti, Impurities in silicon and their impact on solar cell performance. PhD Thesis University of Utrecht (2011), Utrecht
7. J.R. Davis, A. Rohatgi, R.H. Hopkins, P.D. Blais, P. Rai-Choudhury, J.R. Mccormick, H.C. Mollenkopf, Impurities in silicon solar cells. IEEE Trans. Electron. Devices. 27, 677–687 (1980)10.1109/T-ED.1980.19922 ↗
8. J. Schmidt, B. Lim, D. Walter, K. Bothe, S. Gatz, T. Dullweber, P.P. Altermatt, Impurity-related limitations of next-generation industrial silicon solar cells, 38th IEEE photovoltaic specialists Conf. pp 1–5 (2012)10.1109/PVSC-Vol2.2012.6656779 ↗
9. J.D. Murphy, K. Bothe, R. Krain, V.V. Voronkov, R.J. Falster, Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: an application to oxide precipitates in silicon. J. Appl. Phys. 111, 113709 (2012). https://doi.org/10.1063/1.472547510.1063/1.4725475 ↗
10. S. Rein, T. Rehrl, W. Warta, S.W. Glunz, Lifetime spectroscopy for defect characterization: systematic analysis of the possibilities and restrictions. J. Appl. Phys. 91, 2059 (2002)10.1063/1.1428095 ↗
11. D. Macdonald, A. Cuevas, Validity of simplified Shockley-Read-Hall statistics for modeling carrier lifetimes in crystalline silicon. Phys. Rev. B 67, 075203 (2003)10.1103/PhysRevB.67.075203 ↗
12. J. Schmidt, Temperature- and injection-dependent lifetime spectroscopy for the characterization of defect centers in semiconductors. Appl. Phys. Lett. 82, 2178 (2003), https://doi.org/10.1063/1.156383010.1063/1.1563830 ↗
13. D. Walz, J.P. Joly, G. Kamarinos, On the recombination behaviour of iron in moderately boron-doped p-type silicon. Appl. Phys. A 62, 345–353 (1996)10.1007/BF01594232 ↗
14. D. Macdonald, A. Cuevas, Lifetime spectroscopy of FeB pairs in silicon, 11th workshop of crystalline silicon solar cell materials and processes, pp 24–31 (2001)
15. S. Rein, S.W. Glunz, Electronic properties of interstitial iron and iron-boron pairs determined by means of advanced lifetime spectroscopy. J. Appl. Phys. 98, 113711 (2005)10.1063/1.2106017 ↗
16. J.D. Murphy, K. Bothe, R. Krain, V.V. Voronkov, R.J. Falster, Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: an application to oxide precipitates in silicon J. Appl. Phys. 111, 113709 (2012)10.1063/1.4725475 ↗
17. J.D. Murphy, K. Bothe, V.V. Voronkov, R.J. Falster, On the mechanism of recombination at oxide precipitates in silicon. Appl. Phys. Lett. 102 (2013)10.1063/1.4789858 ↗
18. J.D. Murphy, R.E. McGuire, K. Bothe, V.V. Voronkov, R.J. Falster, Minority carrier lifetime in silicon photovoltaics: the effect of oxygen precipitation. Sol Energy Mater. Sol Cells. 120, 402–411 (2014)10.1016/j.solmat.2013.06.018 ↗
19. H. Haug, R. Sondenà, A. Berg, M.S. Wiig, Lifetime spectroscopy with high Spatial resolution based on temperature- and injection dependent photoluminescence imaging. Sol Energy Mater. Sol Cells. 200, 109994 (2019). https://doi.org/10.1016/j.solmat.2019.10999410.1016/j.solmat.2019.109994 ↗
20. C. Vargas, Y. Zhu, G. Coletti, C. Chan, D. Payne, M. Jensen, Z. Hameiri, Recombination parameters of lifetime-limiting carrier-induced defects in multicrystalline silicon for solar cells. Appl. Phys. Lett. 110, 092106 (2017)10.1063/1.4977906 ↗
21. C. Vargas, G. Coletti, C. Chan, D. Payne, Z. Hameiri, On the impact of dark annealing and room temperature illumination on p-type multicrystalline silicon wafers. Sol. Energy Mater. Sol. Cells 189, 166–174 (2019)10.1016/j.solmat.2018.09.018 ↗
22. S. Rein, Lifetime Spectroscopy: a Method of Defect Characterization in Silicon for Photovoltaic Applications, Springer Series in Material Science vol. 85 (Springer-, Berlin/Heidelberg, 2005)10.1007/3-540-27922-9 ↗
23. S. Rein, S.W. Glunz, Electronic properties of the metastable defect in boron-doped Czochralski silicon: unambiguous determination by advanced lifetime spectroscopy. Appl. Phys. Lett. 82(7), 1054–1056 (2003)10.1063/1.1544431 ↗
24. S. Rein, T. Rehrl, W. Warta, S.W. Glunz, Lifetime spectroscopy for defect characterization: systematic analysis of the possibilities and restrictions. J. Appl. Phys. 91, 2059 (2002). https://doi.org/10.1063/1.142809510.1063/1.1428095 ↗
25. A.E. Morishige, M.A. Jensen, D.B. Needleman, K. Nakayashiki, J. Hofstetter, T.A. Li, T. Buonassis, Lifetime spectroscopy investigation of light-induced degradation in p-type multicrystalline silicon PERC. IEEE J. Photovolt. 6, 1466–1472 (2016). https://doi.org/10.1109/JPHOTOV.2016.260669910.1109/JPHOTOV.2016.2606699 ↗
26. L. Mundt et al., Spatially resolved impurity identification via temperature- and injection-dependent photoluminescence imaging. IEEE J. Photovolt. 5(5), 1503–1509 (2015)10.1109/JPHOTOV.2015.2447837 ↗
27. W. Shockley, W. Read, Statistics of the recombinations of holes and electrons. Phys. Rev. 87(5), 835–842 (1952)10.1103/PhysRev.87.835 ↗
28. J.D. Murphy, R.J. Falster, Contamination of silicon by iron at temperatures below 800°C. Phys. Status Solidi 5, 10–11 (2011). https://doi.org/10.1002/pssr.20110538810.1002/pssr.201105388 ↗
29. D. Macdonald, L. Geerligs, A. Azzizi, Iron detection in crystalline silicon by carrier lifetime measurements for arbitrary injection and doping. J. Appl. Phys. 95, 1021–1028 (2004). https://doi.org/10.1063/1.1637110.1063/1.16371 ↗
30. M. Maoudj, D. Bouhafs, N. Bourouba, A. Hamida–Ferhat, A.E. Amrani, Study of the electrical properties of < 100 > Cz p–type solar–grade silicon wafers against the high–temperature processes. Appl. Phys. A 127–407 (2021). https://doi.org/10.1007/s00339-021-04578-710.1007/s00339-021-04578-7 ↗
31. L.C. Kimerling, J.L. Benton, Electronically controlled reactions of interstitial iron in silicon. Phys. B + C 116, 1–3 (1983)10.1016/0378-4363(83)90218-8 ↗
32. X. Zhu, X. Yu, P. Chen, Y. Liu, J. Vanhellemont, D. Yang, Effect of Dopant compensation on the behavior of dissolved iron and iron-boron related complexes in silicon. Int. j. Photoenergy 154574, 154574 (2015). https://doi.org/10.1155/2015/15457410.1155/2015/154574 ↗
33. D. Macdonald, T. Roth, P.N.K. Deenapanray, T. Trupke, R.A. Bardos, Doping dependence of the carrier lifetime crossover point upon dissociation of iron-boron pairs in crystalline silicon. Appl. Phys. Lett. 89, 142107 (2006)10.1063/1.2358126 ↗
34. K. Lauer, C. Möller, D. Debbih, M. Auge, D. Schulze, Determination of activation energy of the iron acceptor pair association and dissociation reaction. Solid State Phenom. Vol. 242 (2015). https://doi.org/10.4028/www.scientific.net/SSP.242.23010.4028/www.scientific.net/SSP.242.230 ↗
35. N. Khelifati, D. Bouhafs, A. Mebarek-Azzem, S.E.-H. Abaidia, B. Palahouane, Y. Kouhlane, Adequate method for decoupling bulk lifetime and surface recombination velocity in silicon wafers. Acta Phys. Pol. A (2016). https://doi.org/10.12693/APhysPolA.130.18810.12693/APhysPolA.130.188 ↗
36. J.W. Chen, L. Zhao, H. Wei Diao, B. Yan, S. Zhou, Y. Hua Tang, W. JingWang, Surface passivation of silicon wafers by Iodine-Ethanol (I-E) for minority carrier lifetime measurements. Adv. Mat. Res. (2013). https://doi.org/10.4028/www.scientific.net/AMR.652-654.90110.4028/www.scientific.net/AMR.652-654.901 ↗
37. G. Zoth, W. Bergholz, A fast, preparation-free method to detect iron in silicon. J. Appl. Phys. 67, 6764 (1990)10.1063/1.345063 ↗
38. J. Schmidt, A. Cuevas, Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon. J. Appl. Phys. 86, 3175–3180 (1999)10.1063/1.371186 ↗
39. F.J. Haug, S. Libraro, M. Lehmann, A. Morisset, A. Ingenito, C. Ballif, Impact of rapid thermal processing on bulk and surface recombination mechanisms in FZ silicon with fired passivating contacts. Solar Energy Mater. Solar Cells. 238, 111647 (2022)10.1016/j.solmat.2022.111647 ↗
40. D. Macdonald, A. Yao Liu, S. Pheng Phang, External and internal gettering of interstitial iron in silicon for solar cells. Solid State Phenom. Vols. 205–206 (2014). https://doi.org/10.4028/www.scientific.net/SSP.205-206.2610.4028/www.scientific.net/SSP.205-206.26 ↗
41. Y. Zhu, G. Coletti, Z. Hameiri, Injection Dependent Lifetime Spectroscopy for Two-Level Defects in Silicon, IEEE 46th Photovoltaic Specialists Conference (PVSC) (2019). https://doi.org/10.1109/PVSC40753.2019.898126110.1109/PVSC40753.2019.8981261 ↗
42. M.S. Wiig, R. Sondena, E.S. Marstein, H. Haug, Identifying defect parameters for common recombination centers in multicrystalline silicon by temperature and injection dependent lifetime spectroscopy, AIP Conference Proceedings 2487, 130013 (2022). https://doi.org/10.1063/5.009023610.1063/5.0090236 ↗
43. M. Rost, D. Stichtenoth, k Meyer, Iron detection in crystalline silicon by different lifetime measurement techniques. Energy Procedia 77, 159–169 (2015). https://doi.org/10.1016/j.egypro.2015.07.02410.1016/j.egypro.2015.07.024 ↗
44. C.B. Collins, R.O. Carlson, Properties of silicon doped with iron or copper. Phys. Rev. 108, 1409 (1957)10.1103/PhysRev.108.1409 ↗
45. K. Graff, H. Pieper, Metal impurities in Silicon-device fabrication, Springer Series in Material Science Vol 24, 2nd edition Springer
46. D. Macdonald, J. Tan, T. Trupke, Imaging interstitial iron concentrations in boron-doped crystalline silicon using photoluminescence. J. Appl. Phys. 103, 073710 (2008)10.1063/1.2903895 ↗
47. A. A. Istratov, H. Hieslmair, E.R. Weber, Iron and its complexes in silicon, Appl. Phys. A 69, 13–44 (1999).10.1007/s003390050968 ↗
48. Schmidt, P. Pohl, K. Bothe, R. Brendel, Advances in Contactless Silicon Defect and Impurity Diagnostics Based on Lifetime Spectroscopy and Infrared Imaging, Advances in OptoElectronics Vol. 2007, Article ID 92842, https://doi.org/10.1155/2007/9284210.1155/2007/92842 ↗
49. D. K. Schroder, Semiconductor material and device characterisation 3rd edn. John wiley and sons (2006)10.1002/0471749095 ↗