Thickness effects of SiO2 underlayers on solid-phase-crystallized Ge thin films
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OpenAlex topics: Thin-Film Transistor Technologies · Photonic and Optical Devices · Silicon and Solar Cell Technologies
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References (29)
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1. S. Datta, S. Dutta, B. Grisafe, J. Smith, S. Srinivasa, H. Ye, IEEE Micro. 39, 8–15 (2019)10.1109/MM.2019.2942978 ↗
2. A.H.T. Nguyen, M.C. Nguyen, A.D. Nguyen, S.J. Jeon, N.H. Park, J.H. Lee, R. Choi, Nano Converg. 11, 5 (2024)10.1186/s40580-023-00411-4 ↗
3. H. Kwon, Y. Oh, W. Choi, Mater Sci Semicon Proc. 199, 109860 (2025)10.1016/j.mssp.2025.109860 ↗
4. K. Toko, K. Moto, T. Imajo, T. Ishiyama, K. Nozawa, S. Maeda, K. Igura, T. Suemasu, Appl. Phys. Rev. 12, 031318 (2025)10.1063/5.0229016 ↗
5. K. Nozawa, T. Ishiyama, T. Nishida, N. Saitoh, N. Yoshizawa, T. Suemasu, K. Toko, Appl. Phys. Lett. 122, 201901 (2023)10.1063/5.0152677 ↗
6. P.V. Evans, S.F. Nelson, J. Appl. Phys. 69, 3605–3613 (1991)10.1063/1.348506 ↗
7. H. Ikeda, J. Appl. Phys. 91, 4637–4645 (2002)10.1063/1.1454202 ↗
8. P. Germain, K. Zellama, S. Squelard, J.C. Bourgoin, A. Gheorghiu, J. Appl. Phys. 50, 6986–6992 (1979)10.1063/1.325855 ↗
9. T. Mizoguchi, T. Ishiyama, K. Moto, T. Imajo, T. Suemasu, K. Toko, Phys. Status Solidi Rapid Res. Lett. 15, 2100509 (2021)
10. A. Toriumi, T. Nishimura, Jpn J. Appl. Phys. 57, 010101 (2018)10.7567/JJAP.57.010101 ↗
11. T. Nishimura, X. Tang, C. Lu, T. Yajima, A. Toriumi, IEEE J. Electron. Devices Soc. 6, 1207–1213 (2018)10.1109/JEDS.2018.2875927 ↗
12. H. Bong, Y. Jang, D. Jung, Y. Cho, W. Choi, D. Ahn, P.R. Sultane, C.W. Bielawski, J. Oh, Appl. Surf. Sci. 671, 160723 (2024)10.1016/j.apsusc.2024.160723 ↗
13. I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, S. Zaima, Mater. Sci. Semicond. Process. 70, 151–155 (2017)10.1016/j.mssp.2016.12.038 ↗
14. C. Xu, X. Gong, M. Miyao, T. Sadoh, Appl. Phys. Lett. 115, 042101 (2019)10.1063/1.5096798 ↗
15. T. Nagano, R. Hara, K. Moto, K. Yamamoto, T. Sadoh, Mater Sci Semicond Proc. 165, 107692 (2023)10.1016/j.mssp.2023.107692 ↗
16. Y. Cho, M. Jiang, D. Ahn, W. Choi, Electron. Mater. Lett. 40, 109631 (2024)
17. T. Imajo, T. Suemasu, K. Toko, Sci. Rep. 11, 8333 (2021)10.1038/s41598-021-87616-x ↗
18. K. Igura, K. Nozawa, T. Ishiyama, T. Suemasu, K. Toko, Sci. Rep. 14, 7812 (2024)10.1038/s41598-024-56282-0 ↗
19. S. Freddi, M. Gherardi, A. Chiappini, A. Arette-Hourquet, I. Berbezier, A. Fedorov, D. Chrastina, M. Bollani, Nanomaterials. 15, 965 (2025)10.3390/nano15130965 ↗
20. S. Baik, M. Jiang, H. Soh, D. Ahn, W. Choi, Mater Sci Semicond Proc. 165, 107682 (2023)10.1016/j.mssp.2023.107682 ↗
21. H. Haesslein, R. Sielemann, C. Zistl, Phys. Rev. Lett. 80, 2626–2629 (1998)10.1103/PhysRevLett.80.2626 ↗
22. T. Imajo, T. Ishiyama, K. Nozawa, T. Suemasu, K. Toko, Sci. Rep. 12, 14941 (2022)10.1038/s41598-022-19221-5 ↗
23. T. Kamins, Polycrystalline silicon for integrated circuits and displays, 2nd edn. (Kluwer, Norwell, Massachusetts, 1998)10.1007/978-1-4615-5577-3 ↗
24. W. Choi, V. Matias, J.K. Lee, A.T. Findikoglu, Appl. Phys. Lett. 87, 152104 (2005)10.1063/1.2103405 ↗
25. I. Jahan, J.D. Arellano, Z. Shi, J. Mater. Chem. C 13, 23675–23695 (2025)10.1039/D5TC03750F ↗
26. H. Kwon, M. Jiang, D. Ahn, W. Choi, Mater. Today Commun. 40, 109631 (2024)10.1016/j.mtcomm.2024.109631 ↗
27. S. Freddi, G. Sfuncia, M. Gherardi, G. Nicotra, C. Barri, L. Fagiani, M. Bouabdellaoui, A. Fedorov, D. Chatain, S. Sanguinetti, M. Abbarchi, M. Bollani, Mater Sci Semicond Proc. 174, 108228 (2024)10.1016/j.mssp.2024.108228 ↗
28. S. Gupta, Y.-C. Huang, Y. Kim, E. Sanchez, K.C. Saraswat, IEEE Electron. Dev. Lett. 34, 831–833 (2013)10.1109/LED.2013.2259573 ↗
29. M.V. Fischetti, S.E. Laux, J. Appl. Phys. 80, 2234–2252 (1996)10.1063/1.363052 ↗