Synthesis and characterization of vertical diode based on organic P-N heterojunction with rectification behavior
Source abstract
Abstract
In this paper, we report a combined experimental and theoretical study on an organic diode heterostructure based on n-type polymer, N2200, and p-type, pentacene, junction. First the device under investigation was fabricated and characterized. The structure exhibits rectifying diode behavior with a rectification ratio that can reach up to 500. Theoretical modeling was conducted, based on numerical simulation using Technology Computer Aided Design (TCAD) software, to predict the electrical response of the studied structure. The numerical simulation was fitted and compared with the experimental results to understand the effect of traps density on such materials. Results confirm that defects play a crucial role in defining the behavior of electronic devices based on organic materials.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Organic Electronics and Photovoltaics · Semiconductor materials and interfaces · Conducting polymers and applications
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