Spectral weeight transfer and band structure modification in a-Si: H revealed by XPS and spectroscopic ellipsometry
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OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence
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References (33)
Show source-provided references
1. D. Qin, J. Chen, N. Lu, A novel density of states (DOS) for disordered organic semiconductors. Micromachines 14, 1361 (2023)10.3390/mi14071361 ↗
2. V. Siller, A. Morata, M. Nuñez Eroles, R. Arenal, J. Carlos Gonzalez-Rosillo, J. M. L del Amo, A. Tarancón. High performance LATP thin film electrolytes for all-solid-state microbattery applications (2021)10.1039/D1TA02991F ↗
3. G. Drera, M.C. Mozzati, P. Colombi, G. Salvinelli, S. Pagliara, D. Visentin, L. Sangaletti, Amorphous Si layers co-doped with B and Mn: thin film growth and steering of magnetic properties. Thin Solid Films 590, 148–155 (2015)10.1016/j.tsf.2015.07.073 ↗
4. S. Wang, J. Li, R. Shi, Z. Xia, L. Lu, H.S. Kwok, M. Wong, Fluorinated indium-gallium-zinc oxide thin-film transistor with reduced vulnerability to hydrogen-induced degradation. J. Soc. Inf. Disp. 28, 520–527 (2020)10.1002/jsid.914 ↗
5. R.A. Street, W.S. Wong, T. Ng, R. Lujan, Amorphous silicon thin film transistor image sensors. Philos. Mag. 89, 2687–2697 (2009)10.1080/14786430802709113 ↗
6. R. Saleh, N. Nickel, W. Fuhs, H. Mell, Amorphous silicon thin—film transistors with non—uniform distribution of gap states. MRS Online Proc. Libr. 219, 339–344 (1991)10.1557/PROC-219-339 ↗
7. C.-C. Huang, Y. Tang, M. van der Laan, J. van de Groep, A.F. Koenderink, K. Dohnalová, Band-gap tunability in partially amorphous silicon nanoparticles using single-dot correlative microscopy. ACS Appl. Nano Mater. 4, 288–296 (2021)10.1021/acsanm.0c02395 ↗
8. E.K.-H. Yu, S. Jun, D.H. Kim, J. Kanicki, Density of states of amorphous In-Ga-Zn-O from electrical and optical characterization. J. Appl. Phys. 116, 154505 (2014)10.1063/1.4898567 ↗
9. M. Kim, G. Jin, K.-B. Kim, J. Song, Effects of the single and double (overlap) scanned excimer laser annealing on solid phase crystallized silicon films. Displays 36, 9–12 (2015)10.1016/j.displa.2014.11.001 ↗
10. F. Vadakepurathu, M. Rana, Electrical, optical and thermal properties of Ge-Si-Sn-O thin films. Materials 17, 3318 (2024)10.3390/ma17133318 ↗
11. S. Kageyama, Dielectric function of a-Si:H based on local network structures Phys. Rev. B 83 2011
12. S. Kageyama, M. Akagawa, H. Fujiwara, Ellipsometry characterization of a-Si:H layers for thin-film solar cells. J. Non-Cryst. Solids 358, 2257–2259 (2012)10.1016/j.jnoncrysol.2011.12.042 ↗
13. A.M. Bakr, A.M. El Nahrawy, A.M. Mansour, A.B. Abou Hammad, Exploring of spectroscopic, dielectric, and bioactivity performance of bioglass/sodium alginate-PVP loaded-Amoxicillin/Clavulanic acid microspheres for bone tissue engineering. Sci. Rep. 15, 15395 (2025)10.1038/s41598-025-96590-7 ↗
14. J.L. Braun, S.W. King, E.R. Hoglund, M.A. Gharacheh, E.A. Scott, A. Giri, J.A. Tomko, J.T. Gaskins, A. Al-kukhun, G. Bhattarai, M.M. Paquette, G. Chollon, B. Willey, G.A. Antonelli, D.W. Gidley, J. Hwang, J.M. Howe, P.E. Hopkins, Hydrogen effects on the thermal conductivity of delocalized vibrational modes in amorphous silicon nitride $(a\text{\ensuremath{-}}{\mathrm{SiN}}x:\mathrm{H})$ Phys. Rev. Mater. 5, 035604 (2021)
15. Z. Algarni, A. Singh, U. Philipose, Synthesis of amorphous InSb nanowires and a study of the effects of laser radiation and thermal annealing on nanowire crystallinity. Nanomaterials 8, 607 (2018)10.3390/nano8080607 ↗
16. C.P. Singh, V.P. Singh, H. Ranjan, S.K. Pandey, Investigation of resistive switching dynamics in e-beam evaporated P-type tin-oxide based cross-cell memristor for synaptic and memory application. Mater. Lett. 352, 135156 (2023)10.1016/j.matlet.2023.135156 ↗
17. C.P. Singh, V.P. Singh, H. Ranjan, S.K. Pandey, Bipolar and rectifying resistive switching dynamics in E-beam evaporated SnOx based memristor. Ceram. Int. 50, 4092–4100 (2024)10.1016/j.ceramint.2023.11.186 ↗
18. C.-Y. Cho, S.-H. Hong, S.-J. Park, Improvement of optical and electrical properties of indium tin oxide layer of GaN-based light-emitting diode by surface plasmon in silver nanoparticles. Thin Solid Films 590, 76–79 (2015)10.1016/j.tsf.2015.07.049 ↗
19. Z. Hafdi, Interface States in Amorphous Silicon Thin-Film Transistors Amorphous Silicon Thin-Film Transistors: Operation, Modelling and Applications ed Z Hafdi (Cham: Springer International Publishing) pp 67–78 (2023)10.1007/978-3-031-24793-4_5 ↗
20. R.A. Street, Localized states in doped amorphous silicon. J. Non-Cryst. Solids 77–78, 1–16 (1985)10.1016/0022-3093(85)90599-X ↗
21. S. Prayogi, Y. Cahyono, I. Iqballudin, M. Stchakovsky, D. Darminto, The effect of adding an active layer to the structure of a-Si: H solar cells on the efficiency using RF-PECVD. J. Mater. Sci. Mater. Electron. 32, 7609–7618 (2021)10.1007/s10854-021-05477-6 ↗
22. M. Khan, G.A. Nowsherwan, R. Ali, M. Ahmed, N. Anwar, S. Riaz, A. Farooq, S.S. Hussain, S. Naseem, J.R. Choi, Investigation of photoluminescence and optoelectronics properties of transition metal-doped ZnO thin films. Molecules 28, 7963 (2023)10.3390/molecules28247963 ↗
23. F. Henari, W. Blau, Nonlinear optical response of amorphous Si:H. J. Appl. Phys. 72, 1676–1680 (1992)10.1063/1.351690 ↗
24. F. Orapunt, S.K. O’Leary, Optical transitions and the mobility edge in amorphous semiconductors: a joint density of states analysis. J. Appl. Phys. 104, 073513 (2008)10.1063/1.2980329 ↗
25. A. Alsaad, J. Bai, W.-N. Mei, J. Turallo, C. Ilie, R. Sabirianov, Proximity effect of optically active h-BCN nanoflakes deposited on different substrates to tailor electronic, spintronic, and optoelectronic properties. Int. J. Mol. Sci. 26, 2096 (2025)10.3390/ijms26052096 ↗
26. C.K. Yang, C.L. Lee, T.F. Lei, H.N. Chern, Radiation effects on n-channel polycrystalline silicon thin-film transistors. Appl. Phys. Lett. 67, 3477–3479 (1995)10.1063/1.115252 ↗
27. S. Reynolds, K. Welter, V. Smirnov, Silicon thin films: functional materials for energy, healthcare, and IT applications. physica status solidi (a) 216, 1800847 (2019)10.1002/pssa.201800847 ↗
28. S. Prayogi, Kresna, Y. Cahyono, Darminto, Electronic structure of P-type amorphous silicon nanowires Phys. Scr. 98 105954 (2023)10.1088/1402-4896/acf89e ↗
29. L. Moulaoui, A. Najim, M. Archi, M. Al-Hattab, O. Bajjou, A. Bakour, Y. Lachtioui, K. Rahmani, B. Manaut, Theoretical study of the Sb-substitution effect on the optoelectronic properties of Cs2AgBiBr 6 double perovskite. Results Chem. 13, 102025 (2025)10.1016/j.rechem.2025.102025 ↗
30. M. Wu, Y. Feng, Z. Kang, Y. Wu, X. Wang, Transition metal-doped SnSe2/MoSe2 heterostructures: modulating electronic, magnetic, and optical properties for spintronic and optoelectronic devices. Appl. Surf. Sci. 693, 162758 (2025)10.1016/j.apsusc.2025.162758 ↗
31. S. Prayogi, Y. Cahyono, D. Darminto, Electronic structure analysis of a-Si: H p-i1-i2-n solar cells using ellipsometry spectroscopy. Opt. Quant. Electron. 54, 732 (2022)10.1007/s11082-022-04044-5 ↗
32. J.Y. Tsao, S. Chowdhury, M.A. Hollis, D. Jena, N.M. Johnson, K.A. Jones, R.J. Kaplar, S. Rajan, C.G. Van de Walle, E. Bellotti, C.L. Chua, R. Collazo, M.E. Coltrin, J.A. Cooper, K.R. Evans, S. Graham, T.A. Grotjohn, E.R. Heller, M. Higashiwaki, M.S. Islam, P.W. Juodawlkis, M.A. Khan, A.D. Koehler, J.H. Leach, U.K. Mishra, R.J. Nemanich, R.C.N. Pilawa-Podgurski, J.B. Shealy, Z. Sitar, M.J. Tadjer, A.F. Witulski, M. Wraback, J.A. Simmons, Ultrawide-bandgap semiconductors: research opportunities and challenges. Adv. Electron. Mater. 4, 1600501 (2018)10.1002/aelm.201600501 ↗
33. G. Horowitz, Validity of the concept of band edge in organic semiconductors. J. Appl. Phys. 118, 115502 (2015)10.1063/1.4931061 ↗