Investigating the influence of oxygen pressure and Sn-doping on β-Ga2O3 thin films for photodetector performance
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OpenAlex topics: Ga2O3 and related materials · Advanced Photocatalysis Techniques · ZnO doping and properties
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References (48)
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1. S.J. Pearton, J. Yang, P.H. Cary, F. Ren, J. Kim, M.J. Tadjer, M.A. Mastro, A review of Ga2O3 materials, processing, and devices. Appl. Phys. Rev. 5, 011301 (2018). https://doi.org/10.1063/1.500694110.1063/1.5006941 ↗
2. M.A. Mastro, A. Kuramata, J. Calkins, J. Kim, F. Ren, S.J. Pearton, Perspective—opportunities and future directions for Ga2O3. ECS J. Solid State Sci. Technol. 6, P356–P359 (2017). https://doi.org/10.1149/2.0031707jss10.1149/2.0031707jss ↗
3. C.H. Lin, C.T. Lee, Ga2O3-based solar-blind deep ultraviolet light-emitting diodes. J. Lumin. 224, 117326 (2020). https://doi.org/10.1016/j.jlumin.2020.11732610.1016/j.jlumin.2020.117326 ↗
4. K. Arora, N. Goel, M. Kumar, M. Kumar, Ultrahigh performance of self-powered β-Ga2O3 thin film solar-blind photodetector grown on cost-effective Si substrate using high-temperature seed layer. ACS Photonics 5, 2391–2401 (2018). https://doi.org/10.1021/acsphotonics.8b0017410.1021/acsphotonics.8b00174 ↗
5. A.S. Pratiyush, S. Krishnamoorthy, S.V. Solanke, Z. Xia, R. Muralidharan, S. Rajan, D.N. Nath, High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector. Appl. Phys. Lett. 110, 221107 (2017). https://doi.org/10.1063/1.498490410.1063/1.4984904 ↗
6. M. Bartic, C.-I. Baban, H. Suzuki, M. Ogita, M. Isai, β-Gallium oxide as oxygen gas sensors at a high temperature. J. Am. Ceram. Soc. 90, 2879–2884 (2007). https://doi.org/10.1111/J.1551-2916.2007.01842.X10.1111/J.1551-2916.2007.01842.X ↗
7. C. Liu, Y. Berencén, J. Yang, Y. Wei, M. Wang, Y. Yuan, C. Xu, Y. Xie, X. Li, S. Zhou, Irradiation effects on the structural and optical properties of single crystal β-Ga2O3. Semicond. Sci. Technol. 33, 095022 (2018). https://doi.org/10.1088/1361-6641/aad8d110.1088/1361-6641/aad8d1 ↗
8. A.K. Singh, M. Gupta, U. Deshpande, V. Sathe, Y.S. Katharria, Effect of annealing temperature on β-Ga2O3 thin films deposited by RF sputtering method. Superlattices Microstruct. 33, 106976 (2021). https://doi.org/10.1016/J.SPMI.2021.10697610.1016/J.SPMI.2021.106976 ↗
9. Y. Zhang, F. Alema, A. Mauze, O.S. Koksaldi, R. Miller, A. Osinsky, J.S. Speck, MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/Vs at room temperature. APL Mater. 7(2), 022506 (2019). https://doi.org/10.1063/1.505805910.1063/1.5058059 ↗
10. K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, S. Yamakoshi, MBE grown Ga2O3 and its power device applications. J. Cryst. Growth 378, 591–595 (2013). https://doi.org/10.1016/j.jcrysgro.2013.02.01510.1016/j.jcrysgro.2013.02.015 ↗
11. S. Yadav, S. Dash, A.K. Patra, G.R. Umapathy, S. Ojha, S.P. Patel, R. Singh, Y.S. Katharria, Effects of energetic ion irradiation on β-Ga2O3 thin films. ECS J. Solid State Sci. Technol. 9, 045015 (2020). https://doi.org/10.1149/2162-8777/AB8B4910.1149/2162-8777/AB8B49 ↗
12. A. Goyal, B.S. Yadav, O.P. Thakur, A.K. Kapoor, R. Muralidharan, Effect of annealing on β-Ga2O3 film grown by pulsed laser deposition technique. J. Alloys Compd. 583, 214–219 (2014). https://doi.org/10.1016/j.jallcom.2013.08.11510.1016/j.jallcom.2013.08.115 ↗
13. B.R. Tak, V. Gupta, A.K. Kapoor, Y. Chu, R. Singh, Wearable Gallium oxide solar-blind photodetectors on Muscovite mica having ultrahigh photoresponsivity and detectivity with added high-temperature functionalities. ACS Appl. Electron. Mater. 1(11), 2463–2470 (2019). https://doi.org/10.1021/acsaelm.9b0060310.1021/acsaelm.9b00603 ↗
14. N. Makeswaran, D. Das, V. Zade, P. Gaurav, V. Shutthanandan, S. Tan, C.V. Ramana, Size- and phase-controlled nanometer-thick β‑Ga2O3 films with green photoluminescence for optoelectronic applications. ACS Appl. Nano Mater. 4, 3331–3338 (2021). https://doi.org/10.1109/jsen.2023.334273910.1109/jsen.2023.3342739 ↗
15. H. Yang, Y. Liu, X. Luo, Y. Li, D. Wuu, K. He, Z.C. Feng, Effects of growth temperature and thickness on structure and optical properties of Ga2O3 films grown by pulsed laser deposition. Superlattices Microstruct. 131, 21–29 (2019). https://doi.org/10.1016/j.spmi.2019.05.02810.1016/j.spmi.2019.05.028 ↗
16. H. Liu, N. Wu, Y. Wu, W. Chen, N. Chiu, Effects of doping concentration on photoresponse characteristics of β-Ga2O3 solar-blind photodetectors. IEEE Sens. J. 1, 99 (2023). https://doi.org/10.1109/jsen.2023.334273910.1109/jsen.2023.3342739 ↗
17. M. Orita, H. Ohta, M. Hirano, H. Hosono, Appl. Phys. Lett. 77, 4166 (2000). https://doi.org/10.1063/1.133055910.1063/1.1330559 ↗
18. H. Sheoran, B.R. Tak, N. Manikanthababu, R. Singh, Temperature-dependent electrical characteristics of Ni/Au vertical Schottky barrier diodes on β-Ga2O3 epilayers. ECS J. Solid State Sci. Technol. 9, 055004 (2020). https://doi.org/10.1149/2162-8777/ab96ad10.1149/2162-8777/ab96ad ↗
19. H. Sheoran, V. Kumar, R. Singh, A comprehensive review on recent developments in Ohmic and Schottky contacts on Ga2O3 for device applications. ACS Appl. Electron. Mater. 4(6), 2589–2628 (2022). https://doi.org/10.1021/acsaelm.2c0010110.1021/acsaelm.2c00101 ↗
20. H. Sheoran, S. Fang, F. Liang, Z. Huang, S. Kaushik, N. Manikanthababu, X. Zhao, H. Sun, R. Singh, S. Long, High performance of zero-power-consumption MOCVD-grown β-Ga2O3- based solar-blind photodetectors with ultralow dark current and high-temperature functionalities. ACS Appl. Mater. Interfaces 14, 46 (2022). https://doi.org/10.1021/acsami.2c0851110.1021/acsami.2c08511 ↗
21. H. Sheoran, R. Singh, Investigation of high-performance Schottky diodes on a Ga2O3 epilayer using Cu with high barrier height, high temperature stability and repeatability. J. Phys. D: Appl. Phys. 56, 405113 (2023). https://doi.org/10.1088/1361-6463/acdfda10.1088/1361-6463/acdfda ↗
22. H. Sheoran, J.K. Kaushik, R. Singh, Study of electrical characteristics of high quality Pt SBDs fabricated on HVPE-grown β-Ga2O3 epilayers in a wide temperature range (80–525 K). Mater. Sci. Semicond. Process. 165, 107606 (2023). https://doi.org/10.1016/j.mssp.2023.10760610.1016/j.mssp.2023.107606 ↗
23. W. Hu, M. Zhang, X. Ma, M. Lv, X. Zhou, K.H. Kim, Structural, optical property and solar-blind photoelectric detection performance of high-quality Mg-doped β-Ga2O3 thin films prepared using RF magnetron sputtering. Surf. Coat. Technol. 506, 132144 (2025). https://doi.org/10.1016/j.surfcoat.2025.13214410.1016/j.surfcoat.2025.132144 ↗
24. W. Hu, M. Zhang, X. Ma, M. Lv, X. Zhou, Investigation of electronic structure, photoelectric and thermodynamic properties of Mg-doped β-Ga2O3 using first-principles calculation. Vacuum 235, 114145 (2025). https://doi.org/10.1016/j.vacuum.2025.11414510.1016/j.vacuum.2025.114145 ↗
25. X. Ma, N. Qi, M. Zhang, First-principles investigation of Zn-doped β-Ga2O3: electronic, optoelectronic, and thermodynamic properties. Physica B 715, 417557 (2025). https://doi.org/10.1016/j.physb.2025.41755710.1016/j.physb.2025.417557 ↗
26. M. Lv, X. Ma, M. Zhang, Enhancing solar-blind UV photodetection of Ga2O3-based photodetectors by using AlN passivation layer. Physica B 715, 417651 (2025). https://doi.org/10.1016/j.physb.2025.41765110.1016/j.physb.2025.417651 ↗
27. M. Zhang, X. Ma, S. Zhang, L. Hou, K.H. Kim, One-step fabrication of wear resistant and friction-reducing Al2O3/MoS2 nanocomposite coatings on 2A50 aluminum alloy by plasma electrolytic oxidation with MoS2 nanoparticle additive. Surf. Coat. Technol. , 131796 (2025). https://doi.org/10.1016/j.surfcoat.2025.13179610.1016/j.surfcoat.2025.131796 ↗
28. S. Yadav, A.K. Singh, M.K. Roy, Y.S. Katharria, Dielectric and structural properties of pure and Sn-mixed Ga2O3 compounds. J. Mater. Sci. Mater. Electron. 34, 632 (2023). https://doi.org/10.1007/s10854-023-10010-y10.1007/s10854-023-10010-y ↗
29. X. Du, Z. Li, C. Luan, W. Wang, M. Wang, X. Feng, H. Xiao, J. Ma, Preparation and characterization of Sn-doped β-Ga2O3 homoepitaxial films by MOCVD. J. Mater. Sci. 50, 3252–3257 (2015). https://doi.org/10.1007/s10853-015-8893-410.1007/s10853-015-8893-4 ↗
30. M. Higashiwaki, K. Sasaki, H. Murakami, Y. Kumagai, A. Koukitu, A. Kuramata, T. Masui, S. Yamakoshi, Recent progress in Ga2O3 power devices. Semicond. Sci. Technol. 31(3), 034001 (2016). https://doi.org/10.1088/0268-1242/31/3/03400110.1088/0268-1242/31/3/034001 ↗
31. N. Episcopo, D. Das, C. Bowers, K. Mahalingam, P.R. Stevenson, C.V. Ramana, Highly textured Sn-doped Ga2O3 epilayers for economically viable solar-blind ultraviolet photodetectors with high responsivity. Adv. Opt. Mater. 13, 2500325 (2025). https://doi.org/10.1002/adom.20250032510.1002/adom.202500325 ↗
32. T. Saidani, M. Zaabat, M.S. Aida, B. Boudine, Effect of copper doping on the photocatalytic activity of ZnO thin films prepared by sol-gel method. Superlattices Microstruct. 88, 315–322 (2015). https://doi.org/10.1016/j.spmi.2015.09.02910.1016/j.spmi.2015.09.029 ↗
33. J. Schou, Physical aspects of the pulsed laser deposition technique: the stoichiometric transfer of material from target to film. Appl. Surf. Sci. 255, 5191 (2009). https://doi.org/10.1016/j.apsusc.2008.10.10110.1016/j.apsusc.2008.10.101 ↗
34. P.R. Willmott, J.R. Huber, Pulsed laser vaporization and deposition. Rev. Mod. Phys. 72, 315 (2000). https://doi.org/10.1103/RevModPhys.72.31510.1103/RevModPhys.72.315 ↗
35. R.K. Singh, J. Narayan, Pulsed-laser evaporation technique for deposition of thin films: physics and theoretical model. Phys. Rev. B 41, 8843 (1990). https://doi.org/10.1103/PhysRevB.41.884310.1103/PhysRevB.41.8843 ↗
36. H.Y. Kang, H. Kang, E. Lee, G.R. Lee, R.B.K. Chung, Sn-Induced phase stabilization and enhanced thermal stability of κ-Ga2O3 grown by mist chemical vapor deposition. ACS Omega 6, 31292 (2021)10.1021/acsomega.1c05130 ↗
37. NIST X-ray Photoelectron Spectroscopy (XPS), Database, Version 3.5. https://srdata.nist.gov/xps/. Accessed 24 Aug 2022
38. C.C. Wang, B.C. Lee, F.S. Shieu, H.C. Shih, Characterization and photoluminescence of Sn-doped β-Ga2O3 nanowires formed by thermal evaporation. Chem. Phys. Lett. 753, 137624 (2020). https://doi.org/10.1016/j.cplett.2020.13762410.1016/j.cplett.2020.137624 ↗
39. A. Mahmoodinezhad, C. Janowitz, F. Naumann, P. Plate, H. Gargouri, K. Henkel, D. Schmeißer, J.I. Flege, Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition. J. Vac. Sci. Technol. A. 38, 022404 (2020). https://doi.org/10.1116/1.513480010.1116/1.5134800 ↗
40. M.M. Fan, Y.J. Lu, K.L. Xu, Y.X. Cui, L. Cao, X.Y. Li, Growth and characterization of Sn-doped β-Ga2O3 thin films by chemical vapor deposition using solid powder precursors toward solar-blind ultraviolet photodetection. Appl. Surf. Sci. 509, 144867 (2020). https://doi.org/10.1016/j.apsusc.2019.14486710.1016/j.apsusc.2019.144867 ↗
41. H. Ryou, T.H. Yoo, Y. Yoon, I.G. Lee, M. Shin, J. Cho, B.J. Cho, W.S. Hwang, Hydrothermal synthesis and photocatalytic property of Sn-doped β-Ga2O3 nanostructure. ECS J. Solid State Sci. Technol. 9, 045009 (2020). https://doi.org/10.1149/2162-8777/ab8b4b10.1149/2162-8777/ab8b4b ↗
42. J.L. Zhao, X.W. Sun, H. Ryu, S.T. Tan, UV and visible electroluminescence from a Sn:Ga2O3/n+ -Si heterojunction by metal–organic chemical vapor deposition. IEEE Trans. Electron. Devices 58, 5 (2011). https://doi.org/10.1109/TED.2011.211236410.1109/TED.2011.2112364 ↗
43. X. Zhao, W. Cui, Z. Wu, D. Guo, P. Li, Y. An, L. Li, W. Tang, Growth and characterization of Sn doped β-Ga2O3thin films and enhanced performance in a solar-blind photodetector. J. Electron. Mater. 46, 2366–2372 (2017). https://doi.org/10.1007/s11664-017-5291-510.1007/s11664-017-5291-5 ↗
44. B.R. Tak, M. Garg, A. Kumar, V. Gupta, R. Singh, Gamma irradiation effect on performance of β-Ga2O metal-semiconductor-metal solar-blind photodetectors for space applications. ECS J. Solid State Sci. Technol. 8, Q3149–Q3153 (2019). https://doi.org/10.1149/2.0291907jss10.1149/2.0291907jss ↗
45. B.R. Tak, M.M. Yang, Y.H. Lai, Y.H. Chu, M. Alexe, R. Singh, Photovoltaic and flexible deep ultraviolet wavelength detector based on novel β-Ga2O3/muscovite heteroepitaxy. Sci. Rep. 10, 16098 (2020). https://doi.org/10.1038/s41598-020-73112-110.1038/s41598-020-73112-1 ↗
46. D. Guo, Z. Wu, P. Li, Y. An, H. Liu, X. Guo, H. Yan, G. Wang, C. Sun, L. Li, W. Tang, Opt. Mater. Express. 4, 1067 (2014). https://doi.org/10.1364/ome.4.00106710.1364/ome.4.001067 ↗
47. Y. Li, Y. Li, Y. Ji, H. Wang, D. Zhong, Sol–gel preparation of Sn doped gallium oxide films for application in solar-blind ultraviolet photodetectors. J. Mater. Sci. 57, 1186–1197 (2022). https://doi.org/10.1007/S10853-021-06680-W10.1007/S10853-021-06680-W ↗
48. M. Mikulics, M. Marso, S. Wu, A. Fox, M. Lepsa, D. Grützmacher, R. Sobolewski, P. Kordos, Sensitivity enhancement of metal–semiconductor–metal photodetectors on low-temperature-grown GaAs using alloyed contacts. IEEE Photonics Technol. Lett. 20, 12 (2008)10.1109/LPT.2008.924184 ↗