journal article·2025-11

Strain relaxation and size variation of epitaxial Ge nanostructures on 4H-SiC (0001)

Kumari Neha, Biswanath Das, Paramita Maiti, Biswarup Satpati, Shikha Varma, Mrinmay Mukhopadhyay, Dipak Kumar Goswami, Parlapalli Venkata Satyam

Applied Physics A· Volume 131· Issue 11
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OpenAlex topics: Silicon Carbide Semiconductor Technologies · Semiconductor materials and interfaces · GaN-based semiconductor devices and materials

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