Effect of annealing on resistivity of Cu and CuAl metallization
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OpenAlex topics: Copper Interconnects and Reliability · Electronic Packaging and Soldering Technologies · Aluminum Alloys Composites Properties
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References (27)
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1. J.D. Plummer, P.B. Graffin, Material and Process Limits in Silicon VLSI Technology, Proc. IEEE. 89 (2001) 240–25810.1109/5.915373 ↗
2. J. Nah, H. Fang, C. Wang, K. Takei, M.H. Lee, E. Plis, S. Krishna, A. Javey, III–V Complementary Metal–Oxide–Semiconductor Electronics on Silicon Substrates, Nano Lett. 12 (2012) 3592–359510.1021/nl301254z ↗
3. M.F. Gonzalez-Zalba, S. de Franceschi, E. Charbon, T. Meunier, M. Vinet, A.S. Dzurak, Scaling silicon-based quantum computing using CMOS technology. Nat. Electron. 4, 872–884 (2021)10.1038/s41928-021-00681-y ↗
4. S. Verhaverbeke, I. Teerlinck, C. Vinckier, G. Stevens, R. Cartuyvels, M.M. Heyns, The etching mechanisms of SiO2 in hydrofluoric acid. J. Electrochem. Soc. 141, 2852 (1994)10.1149/1.2059243 ↗
5. D. Hubner, W. Meister, L. Reissmuller, Metallization of semiconductor devices by high rate sputtering of aluminium. Thin Solid Films. 54, 345–351 (1978)10.1016/0040-6090(78)90396-6 ↗
6. P.S. Ho, T. Kwok, Electromigration in metals. Rep. Prog Phys. 52, 301–348 (1989)10.1088/0034-4885/52/3/002 ↗
7. T. Naoe et al., Mechanism of void formation in TiN/AlSiCu/TiN/plasma-enhanced tetraethyl orthosilicate SiO2 multi-layer structures via high-temperature stress migration, Mat. Sci. Semicon. Proc. 83 (2018) 239–24810.1016/j.mssp.2018.04.013 ↗
8. S.P. Murarka, R.J. Gutmann, A.E. Kaloyeros, W.A. Lanford, Advanced multilayer metallization schemes with copper as interconnection metal. Thin Solid Films. 236, 257–266 (1993)10.1016/0040-6090(93)90680-N ↗
9. N.G. Kang, M.-J. Ha, J.-H. Ahn, Ultrathin metal films with low resistivity via atomic layer deposition: process pressure effect on initial growth behavior of Ru films. Chem. Mater. 36, 8496–8503 (2024)10.1021/acs.chemmater.4c01707 ↗
10. D.-J. Kim, Y.-B. Jung, M.-B. Lee, Y.-H. Lee, J.-H. Lee, J.-H. Lee, Applicability of ALE TiN films as Cu/Si diffusion barriers. Thin Solid Films. 372, 276–283 (2000)10.1016/S0040-6090(00)01049-X ↗
11. M. Sun, M.G. Pecht, D. Barbe, Lifetime RC time delay of On-Chip copper interconnect. IEEE Trans. Semicond. Manuf. 15, 253–259 (2002)10.1109/66.999601 ↗
12. I. Ciofi et al., Impact of wire geometry on interconnect RC and circuit delay. IEEE Trans. Electron. Devices. 63, 2488–2496 (2016)10.1109/TED.2016.2554561 ↗
13. H.-W. Kim, Recent trends in copper metallization. Electronics. 11, 2914 (2022)10.3390/electronics11182914 ↗
14. V. Founta, J.P. Soulié, Properties of ultrathin molybdenum films for interconnect applications. Mater. 24, 101511 (2022)
15. L.G. Wen et al., Ruthenium metallization for advanced interconnects. IEEE Int. Interconnect. Technol. Conf. / Adv. Metallization Conf. (IITC/AMC) (2016) 34–3610.1109/IITC-AMC.2016.7507651 ↗
16. D. Gall, The search for the most conductive metal for narrow interconnect lines. J. Appl. Phys. 127, 050901 (2020)10.1063/1.5133671 ↗
17. L. Chen, S. Kumar, M. Yahagi, D. Ando, Y. Sutou, D. Gall, R. Sundararaman, J. Koike, Interdiffusion reliability and resistivity scaling of intermetallic compounds as advanced interconnect materials. J. Appl. Phys. 129, 035301 (2021)10.1063/5.0026837 ↗
18. J.P. Soulié, K. Sankaran, G. Pourtois, J. Swerts, Z. Tőkei, Adelmann. Cu1– xAlx films as alternatives to copper for advanced interconnect metallization. J. Vac Sci. Technol. B 42, 043203 (2024)10.1116/6.0003634 ↗
19. L. Chen, D. Ando, Y. Sutou, S. Yokogawa, J. Koike, Liner-and barrier-free NiAl metallization: A perspective from TDDB reliability and interface status. Appl. Surf. Sci. 497, 143810 (2019)10.1016/j.apsusc.2019.143810 ↗
20. M.-T. Le, Y.-U. Sohn, J.-W. Lim, G.S. Choi, Effect of sputtering power on the nucleation and growth of Cu films deposited by Magnetron sputtering. Mater. Trans. 51, 116–120 (2010)10.2320/matertrans.M2009183 ↗
21. D. Chaverri, A. Saenz, V. Castano, Grain size and electrical resistivity measurements on aluminum polycrystalline thin films. Mater. Lett. 12, 344–348 (1991)10.1016/0167-577X(91)90114-L ↗
22. H. Bishara, M. Ghidelli, G. Dehm, Approaches to measure the resistivity of grain boundaries in metals with high sensitivity and Spatial resolution: A case study employing Cu. ACS Appl. Electron. Mater. 2, 2049–2056 (2020)10.1021/acsaelm.0c00311 ↗
23. D.D. Gebhart, A. Krapf, C. Gammer, B. Merle, M.J. Cordill, Linking through-thickness cracks in metallic thin films to in-situ electrical resistance peak broadening. Scr. Mater. 212, 114550 (2022)10.1016/j.scriptamat.2022.114550 ↗
24. H.-D. Liu, Y.-P. Zhao, G. Ramanath, S.P. Murarka, G.-C. Wang, Thickness dependent electrical resistivity of ultrathin (< 40 nm) Cu films. Thin Solid Films. 384, 151–156 (2001)10.1016/S0040-6090(00)01818-6 ↗
25. J.-W. Lim, K. Mimura, M. Isshiki, G.-C. Wang, Thickness dependence of resistivity for Cu films deposited by ion beam deposition. Appl. Surf. Sci. 271, 95–99 (2003)10.1016/S0169-4332(03)00522-1 ↗
26. K.-Y. Chan, T.-Y. Tou, Teo,Thickness dependence of the structural and electrical properties of copper films deposited by DC Magnetron sputtering technique. Microelectron. J. 37, 608–612 (2006)10.1016/j.mejo.2005.09.016 ↗
27. P. Zheng, D. Gall, The anisotropic size effect of the electrical resistivity of metal thin films: tungsten. J. Appl. Phys. 122, 135301 (2017)10.1063/1.5004118 ↗