journal article·2024-12

Ge-doping in polycrystalline GaN layer through electron beam evaporator deposition with successive ammonia annealing

N. Yusop, S. N. Waheeda, E. A. Alias, M. E. A. Samsudin, M. Ikram Md Taib, N. Zainal

Applied Physics A· Volume 130· Issue 12
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Abstract

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OpenAlex topics: GaN-based semiconductor devices and materials · Photocathodes and Microchannel Plates · Ga2O3 and related materials

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References (35)

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