Effect of heterointerfaces on the magnetic and electrical properties of (La0.7Sr0.3MnO3)0.5:NiO0.5 nanocomposite thin films
Source abstract
Abstract
Constructing artificial heterointerfaces in the complex oxides composites to enhance and explore new functionalities have been attracting extensive scientific attentions. It is of great significant to clarify the role of heterointerfaces on the functional properties. In this study, the La0.7Sr0.3MnO3/NiO heterointerfaces were constructed in self-assembled epitaxial (La0.7Sr0.3MnO3)0.5:NiO0.5 (LSMO:NiO) nanocomposite thin films by the method of pulsed laser deposition (PLD). The effect of LSMO/NiO heterointerfaces on the magnetic and electrical transport properties were studied by changing the geometric distribution of heterointerface and interfacial area. Interestingly, enhanced magnetoresistance (MR) with room temperature range at a low magnetic field of 1 T can be regulated by LSMO/NiO heterointerfaces. The mechanism of artificial electronic phase separation formed by LSMO/NiO heterointerfaces was proposed to explain the enhanced room temperature MR effect. This study provides an effective way to regulate the functional properties of oxides nanocomposite thin films by utilizing heterointerfaces.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Magnetic and transport properties of perovskites and related materials · Multiferroics and related materials · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (33)
Show source-provided references
1. Z. Chen, Z. Liu, Y. Sun, X. Chen, Y. Liu, H. Zhang, H. Li, M. Zhang, S. Hong, T. Ren, C. Zhang, H. Tian, Y. Zhou, J. Sun, Y. Xie, Phys. Rev. Lett. 126, 026802 (2021)10.1103/PhysRevLett.126.026802 ↗
2. M. Zhang, K. Du, T. Ren, H. Tian, Z. Zhang, H.Y. Hwang, Y. Xie, Nat. Commun. 10, 4026 (2019)10.1038/s41467-019-12036-5 ↗
3. D. Yi, P. Yu, Y.-C. Chen, H.-H. Lee, Q. He, Y.-H. Chu, R. Ramesh, Adv. Mater. 31, 1806335 (2019)10.1002/adma.201806335 ↗
4. J. Peng, C. Song, F. Li, B. Cui, H. Mao, Y. Wang, G. Wang, F. Pan, A.C.S. Appl, Mat. Interfaces 7, 17700 (2015)10.1021/acsami.5b04994 ↗
5. Z. Huang, Ariando, X.R. Wang, A. Rusydi, J. Chen, H. Yang, T. Venkatesan, Adv. Mater. 30, 1802439 (2018)10.1002/adma.201802439 ↗
6. H. Wang, F. Liu, W. Fu, Z. Fang, W. Zhou, Z. Liu, Nanoscale 6, 12250 (2014)10.1039/C4NR03435J ↗
7. R. Ramesh, D.G. Schlom, Nat. Rev. Mater. 4, 257 (2019)10.1038/s41578-019-0095-2 ↗
8. J.L. MacManus-Driscoll, Adv. Funct. Mater. 20, 2035 (2010)10.1002/adfm.201000373 ↗
9. J. Huang, J.L. MacManus-Driscoll, H. Wang, J. Mater. Res. 32, 4054 (2017)10.1557/jmr.2017.281 ↗
10. H.-J. Liu, W.-I. Liang, Y.-H. Chu, H. Zheng, R. Ramesh, MRS Commun. 4, 31 (2014)10.1557/mrc.2014.13 ↗
11. D. Li, D. Zheng, J. Gong, W. Zheng, C. Jin, H. Bai, A.C.S. Appl, Mat. Interfaces 9, 24331 (2017)10.1021/acsami.7b05803 ↗
12. Y.J. Wu, Z.J. Wang, Y. Bai, Y.M. Liang, X.K. Ning, Q. Wang, W. Liu, Z.D. Zhang, J. Mater. Chem. C. 7, 6091 (2019)10.1039/C9TC01141B ↗
13. W. Xia, Z. Pei, K. Leng, X. Zhu, Nanoscale Res. Lett. 15, 9 (2020)10.1186/s11671-019-3243-0 ↗
14. W. Zhang, A. Chen, Z. Bi, Q. Jia, J.L. MacManus-Driscoll, H. Wang, Curr. Opin. Solid. ST. M. 18, 6 (2014)10.1016/j.cossms.2013.07.007 ↗
15. Z.J. Wang, MRS Bull. 46, 131 (2021)10.1557/s43577-021-00031-5 ↗
16. X. Sun, M. Kalaswad, Q. Li, R.L. Paldi, J. Huang, H. Wang, X. Gao, X. Zhang, H. Wang, Adv. Mater. Interfaces 7, 1901990 (2020)10.1002/admi.201901990 ↗
17. W. Zhang, A. Chen, F. Khatkhatay, C.F. Tsai, Q. Su, L. Jiao, X. Zhang, H. Wang, A.C.S. Appl, Mater. Interfaces 5, 3995 (2013)10.1021/am400068h ↗
18. X. Gao, L. Li, J. Jian, J. Huang, X. Sun, D. Zhang, H. Wang, Appl. Phys. Lett. 115, 053103 (2019)10.1063/1.5109449 ↗
19. P. Gyanendra, A. Panchwanee, M. Kumar, K. Fritsch, R.J. Choudhary, D.M. Phase, A.C.S. Appl, Nano Mater. 4, 102 (2021)
20. N.K. Ning, Z.J. Wang, Z.D. Zhang, Adv. Funct. Mater. 24, 5393 (2014)10.1002/adfm.201400735 ↗
21. M. Fan, W.R. Zhang, F. Khatkhatay, L.G. Li, H.Y. Wang, J. Appl. Phys. 118, 065302 (2015)10.1063/1.4928160 ↗
22. M. Staruch, D. Hires, A. Chen, Z. Bi, H. Wang, M. Jain, J. Appl. Phys. 110, 113913 (2011)10.1063/1.3665881 ↗
23. A.P. Chen, Z.X. Bi, H. Hazariwala, X.H. Zhang, Q. Su, L. Chen, Q.X. Jia, J.L. MacManus-Driscoll, H.Y. Wang, Nanotechnology 22, 315712 (2011)10.1088/0957-4484/22/31/315712 ↗
24. A. Chen, Z. Bi, C.F. Tsai, J.H. Lee, Q. Su, X. Zhang, Q. Jia, J.L. Macmanus-Driscoll, H. Wang, Adv. Funct. Mater. 21, 2423 (2011)10.1002/adfm.201002746 ↗
25. X. Sun, Q. Li, J. Huang, M. Fan, B.X. Rutherford, R.L. Paldi, J. Jian, X. Zhang, H. Wang, Appl. Mater. Today 16, 204 (2019)10.1016/j.apmt.2019.05.012 ↗
26. A. Chen, Z. Bi, Q. Jia, J.L. MacManus-Driscoll, H. Wang, Acta Mater. 61, 2783 (2013)10.1016/j.actamat.2012.09.072 ↗
27. M. Fan, W. Zhang, J. Jian, J. Huang, H. Wang, APL. Mater. 4, 076105 (2016)10.1063/1.4958965 ↗
28. X. Ning, Z. Wang, Z. Zhang, Adv. Mater. Interfaces 2, 1500302 (2015)10.1002/admi.201500302 ↗
29. P. Schlottmann, Phys. Rev. B: Condens. Matter 59, 11484 (1999)10.1103/PhysRevB.59.11484 ↗
30. S.-Q. Shen, Z. Wang, Phys. Rev. B 58, R8877 (1998)10.1103/PhysRevB.58.R8877 ↗
31. M. Uehara, S. Mori, C.H. Chen, S.W. Cheong, Nature 399, 560 (1999)10.1038/21142 ↗
32. L. Zhang, C. Israel, A. Biswas, R.L. Greene, A. de Lozanne, Science 298, 805 (2002)10.1126/science.1077346 ↗
33. Z. Bi, E. Weal, H. Luo, A. Chen, J.L. MacManus-Driscoll, Q. Jia, H. Wang, J. Appl. Phys. 109, 054302 (2011)10.1063/1.3552594 ↗