High-resolution electron microscopy of Si cones formed on Ar+-bombarded Si wafers
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OpenAlex topics: Silicon and Solar Cell Technologies · Ion-surface interactions and analysis · Integrated Circuits and Semiconductor Failure Analysis
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References (26)
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1. A. Güntherschulze, W.V. Tollmien: Z. Phys.119, 685 (1942)10.1007/BF01340472 ↗
2. A.D.G. Stewart, M.W. Thompson: J. Mater. Sci.4, 56 (1967)10.1007/BF00555048 ↗
3. O. Auciello, R. Kelly, R. Iricibar: Radiat. Eff.46, 105 (1980)10.1080/00337578008209158 ↗
4. R. Kelly, O. Auciello: Surf. Sci.100, 135 (1980)10.1016/0039-6028(80)90449-5 ↗
5. G.K. Wehner: Appl. Phys. Lett.43, 366 (1983)10.1063/1.94339 ↗
6. G.K. Wehner: J. Vac. Sci. Technol. A3, 1821 (1985)10.1116/1.573386 ↗
7. J.L. Whitton, O. Hlock, G. Carter, M.J. Nobes: Nucl. Instrum. Meth.170, 371 (1980)10.1016/0029-554X(80)91042-3 ↗
8. M. Tanemura, F. Okuyama: J. Vac. Sci. Technol. A4, 2369 (1986)10.1116/1.574078 ↗
9. M. Tanemura, S. Morisihta, Y. Fujimoto, F. Okuyama: Surf. Sci.180, L103 (1987)10.1016/0039-6028(87)90029-X ↗
10. S. Morishita, Y. Fujimoto, F. Okuyama: J. Vac. Sci. Technol. A6, 217 (1988)10.1116/1.574984 ↗
11. O. Auciello, R. Kelly: Radiat. Eff.66, 195 (1982)10.1080/00337578208222479 ↗
12. G.W. Lewis, G. Carter, M.J. Nobes, S.A. Gruz: Radiat. Eff. Lett.58, 119 (1981)10.1080/01422448108229074 ↗
13. I.H. Wilson, J. Belson, O. Auciello:Ion Bombardment Modification of Surfaces, ed. by O. Auciello and R. Kelly (Elsevier, Amsterdam 1984) 248
14. S. Morishita, F. Okuyama: Unpublished
15. W.P. Dyke, W.W. Dolan:Advances in Electronics and Electron Physics, Vol. 8, ed. by L. Marton (Academic, New York 1956) p. 89
16. G. Cater, J.S. Colligon, M.J. Nobes: J. Mater. Sci.8, 1473 (1973)10.1007/BF00551671 ↗
17. G. Carter, J.S. Colligon, M.J. Nobes: Radiat. Eff.31, 65 (1977)10.1080/00337577708234784 ↗
18. C. Kaito, N. Nakamura, T. Yoshida, M. Shiojiri: J. Cryst. Growth66, 156 (1984)10.1016/0022-0248(84)90086-1 ↗
19. Y. Ishida, H. Ichinose: J. Electron Microsc.34, 266 (1985)
20. See, for example, S.R. Battacharya, D. Ghose, D. Basu, E.B. Karmohapatro: J. Vac. Sci. Technol. A5, 179 (1987)10.1116/1.574099 ↗
21. See, for example, K. Wittmaack: Vacuum34, 119 (1984)10.1016/0042-207X(84)90115-5 ↗
22. G.W. Lewis, M.J. Nobes, G. Carter, J.L. Whitton: Nucl. Instrum. Meth170, 363 (1980)10.1016/0029-554X(80)91041-1 ↗
23. O. Auciello: J. Vac. Sci. Technol.19, 841 (1981)10.1116/1.571224 ↗
24. P. Williams:Applied Atomic Collision Physics, Vol. 4, ed. by S. Datz (Academic, New York 1983) Chap. 4
25. Y. Matsuda, C. Honda, S. Matsubaguchi, T. Moroishi, K. Muraoka, M. Maeda, M. Akazaki: Jpn. J. Appl. Phys.25, L182 (1986)10.1143/JJAP.25.L182 ↗
26. P.S. Wagner: Whisker Technology, ed. by A.P. Levitt (Wiley, New York 1970) Chap. 3