journal article·2017-05Open access

Erratum to: Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectors

B. Tongbram, S. Shetty, H. Ghadi, S. Adhikary, S. Chakrabarti

Applied Physics A· Volume 123· Issue 5

Abstract

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Research context

OpenAlex topics: Semiconductor Quantum Structures and Devices

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