Characterization of vacancy-related defects introduced into silicon during heat treatment by deep-level transient spectroscopy and gamma-ray diffraction techniques

N. A. Sobolev; E. I. Shek; A. I. Kurbakov; E. E. Rubinova; A. E. Sokolov

doi:10.1007/s003390050295

journal article·1996-02-27

Characterization of vacancy-related defects introduced into silicon during heat treatment by deep-level transient spectroscopy and gamma-ray diffraction techniques

N. A. Sobolev, E. I. Shek, A. I. Kurbakov, E. E. Rubinova, A. E. Sokolov

Applied Physics A: Materials Science & Processing· Volume 62· Issue 3

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Materials processing

OpenAlex topics: Silicon and Solar Cell Technologies · Semiconductor materials and interfaces · Integrated Circuits and Semiconductor Failure Analysis

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