Phonon replicas of type-II GaSb/GaAs quantum dot structure grown by liquid phase epitaxy
Source abstract
Abstract
Type-II GaSb/GaAs quantum dot (QD) structures have attracted a great deal of attention owing to their unique optical and electrical properties associated with type-II band alignment. In this study, GaSb QDs were grown on GaAs substrates using liquid phase epitaxy (LPE) technique. The morphology of the obtained QDs was studied by scanning electron microscope and atom force microscope. The optical properties of the QDs were investigated by photoluminescence (PL) spectra. Strong first- and second-order longitudinal optical-phonon replicas were observed on the low-energy side of the wetting layer peak in the PL spectra.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Quantum Dots Synthesis And Properties · Advanced Semiconductor Detectors and Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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