Effects of thickness layer on the photoluminescence properties of InAlAs/GaAlAs quantum dots
Source abstract
Abstract
We investigated the effect of InAlAs layer thickness on exciton-spin relaxation and optical properties of In0.62Al0.38As/Al0.67Ga0.33As QDs. The luminescence properties and carrier dynamics of QDs were studied by the temperature-dependent photoluminescence (PL) and pump-probe measurements. As the total amount of deposited In0.62Al0.38As alloy increased, the central position of the low-energy PL signal decreases, while its full width at half maximum (FWHM) increases. A monotonous redshift of the PL peak was observed with increasing temperature due to the electron–phonon scattering. From the pump-probe measurement, the spin relaxation time decreases with the monolayers at higher temperatures, in agreement with the phonon energy determinate by PL measurements.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Quantum Dots Synthesis And Properties · Quantum and electron transport phenomena
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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