Numerical investigation of In0.23Ga0.77As-based planar Gunn diodes with fundamental frequency up to 116 GHz
Source abstract
Abstract
The current capability and frequency of In0.23Ga0.77As-based planar Gunn diode have been studied using numerical simulation. Our simulated results are well in agreement with the experimental observation with fundamental frequency operating up to 116 GHz. Through the Fast Fourier transform algorithm, it has been revealed that oscillating frequency tunes downward slightly with increased applied voltage above threshold voltage, and a second-harmonic frequency is observed at 233 GHz for 1.45-μm channel length. This structure provides feasibility of generating a tunable millimeter wave or terahertz wave source and has an overwhelming advantage over equivalent traditional vertical structure because of increased facilitated integration and flexibility.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Superconducting and THz Device Technology · Semiconductor Quantum Structures and Devices · Terahertz technology and applications
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