Band offsets of Er 2 O 3 $\mathrm{Er}2\mathrm{O}3$ films grown on Ge substrates by X-ray photoelectron spectroscopy
Source abstract
Abstract
The band alignments of high-k Er2O3 films grown on Ge substrates by molecular beam epitaxy are determined by X-ray photoelectron spectroscopy. The valence-band and the conduction-band offsets of Er2O3 to Ge are found to be (3.16pm0.02) and (2.13pm0.02 mbox{eV}), respectively. The energy gap of Er2O3 is (5.96pm0.02 mbox{eV}) as determined by the optical spectrophotometry. From the band offset viewpoint, the above results indicate that Er2O3 could be a promising candidate for high-k gate dielectrics on Ge substrate.
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Research context
OpenAlex topics: Semiconductor materials and devices · Silicon Nanostructures and Photoluminescence · Ga2O3 and related materials
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