journal article·1993-11

Electron traps in wide-gap n-Hg0.3Cd0.7Te characterized by time-resolved photoconductivity

J. X. Huang, G. Barut, J. Lange

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OpenAlex topics: Advanced Semiconductor Detectors and Materials · Advanced X-ray and CT Imaging

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References (8)

Show source-provided references
1. R. Dornhaus, G. Nimtz, B. Schlicht (eds.): Narrow-Gap Semiconductors, Springer Tracts Mod. Phys., Vol. 98 (Springer, Berlin, Heidelberg 1983)
2. J. Schilz, T. N'Guyen Duy: Semicond. Sci. Technol. 3, 992 (1988)10.1088/0268-1242/3/10/006 ↗
3. D.L. Polla, C.E. Jones: J. Appl. Phys. 52, 5118 (1981)10.1063/1.329411 ↗
4. D.L. Polla, M.B. Reine, C.E. Jones: J. Appl. Phys. 52, 5132 (1981)10.1063/1.329412 ↗
5. D.L. Lang: J. Appl. Phys. 45, 3023 (1974)10.1063/1.1663719 ↗
6. D.E. Lacklison, G. Duggan: J. Appl. Phys. 55 (12), 4257 (1984)10.1063/1.333028 ↗
7. Y. Shacham-Diamond, I. Kindron: J. Appl. Phys. 56 (4), 1104 (1984)10.1063/1.334081 ↗
8. J.X. Huang: Dissertation, Shanghai Institute of Technical Physics, Shanghai, China (1989)