journal article·1976-06

The influence of deep levels on the temperature coefficient of ion-implanted resistive layers in silicon

H. Runge, E. F. Krimmel

Applied Physics· Volume 10· Issue 2
Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Silicon and Solar Cell Technologies · Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (9)

Show source-provided references
1. K. Rosendal: Rad. Effects7, 95 (1975)10.1080/00337577108232568 ↗
2. H. Runge, E.F. Krimmel: Solid State Electr.18, 149 (1975)10.1016/0038-1101(75)90097-0 ↗
3. H. Runge: Phys. Stat. sol. (a)30, 147 (1975)10.1002/pssa.2210300115 ↗
4. H. Runge: Appl. Phys.8, 43 (1975)10.1007/BF00883668 ↗
5. H. Runge: InIon Implantation in Semiconductors, ed. by S. Namba, (Plenum Press, New York: 1975)
6. R.A. Smith:Semiconductors (Cambridge at the University Press 1959)
7. I.W. Mayer, L. Eriksson, I.A. Davies: InIon Implantation in Semiconductors (Academic Press New York: 1970)
8. M. Schulz: Appl. Phys.4, 91 (1974)10.1007/BF00884263 ↗
9. S.M. Sze:Physics of Semiconductor Devices (J. Wiley and Sons, New York 1969)