journal article·1994-08

Electrical properties of p +/n + InGaAsP tunnel diodes with a bandgap of 0.95 eV grown by liquid phase epitaxy

C. C. Shen, P. T. Chang

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Abstract

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Research context

OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · Semiconductor Quantum Structures and Devices

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References (6)

Show source-provided references
1. C.C. Shen, P.T. Chang, K.Y. Choi: Appl. Phys. A 56, 153 (1993)10.1007/BF00517683 ↗
2. S.K. Ghandhi, R.T. Huang, J.M. Borrego: Appl. Phys. Lett. 48, 415 (1986)10.1063/1.97012 ↗
3. C.C. Shen, K.Y. Choi: IEEE Trans. EDL-6, 78 (1985)
4. C.C. Shen, P.T. Chang, K.Y. Choi: IEEE Trans. ED-37, 464 (1990)10.1109/16.46384 ↗
5. K.Y. Choi, C.C. Shen: J. Appl. Phys. 63, 1198 (1988)10.1063/1.339980 ↗
6. J.M. Olson, S.R. Kurtz, A.E. Kibbler, P. Faine: Appl. Phys. Lett. 56, 623 (1990)10.1063/1.102717 ↗