journal article·1990-10

CMOS 1/f noise: n-channel versus p-channel

D. C. Murray, J. C. Carter, A. G. R. Evans

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · Radiation Effects in Electronics · Semiconductor materials and devices

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References (9)

Show source-provided references
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3. Z.Y. Chang, W. Sansen: Proc. IEEE 1989 Int. Conf. Microelectronic Test Structures 2(i), 143?146 (1989)10.1109/ICMTS.1989.39299 ↗
4. K. Nakamura, O. Kudoh, M.J. Kamoshida: J. Appl. Phys. 46, 3189?3193 (1975)10.1063/1.321970 ↗
5. W. Brodersen: J. Solid State Cir. 11, 147?155 (1976)10.1109/JSSC.1976.1050690 ↗
6. C. Cox: AERE Report R10298 HMSO (1981)
7. A.L. McWhorter: Semiconductor Surface Physics (University of Pennsylvania Press, Philadelphia 1957)
8. R. Jayraman, C.G. Sodini: IEEE Trans. ED-36, 1773?1782 (1989)10.1109/16.34242 ↗
9. R.P. Feynman, R.B. Leighton, M. Sands: The Feynmann Lectures on Physics II (Addison Wesley, Massachusetts 1964) Chap. 7