Interacting diffusion of two dopants through crystalline silicon
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OpenAlex topics: Silicon and Solar Cell Technologies · Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence
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References (8)
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1. R.B. Fair: Concentration profiles of diffused dopants in silicon, in Impurity Doping Processes in Silicon, ed. by F.F.Y. Wang (North-Holland, New York 1981) pp. 315?41210.1016/B978-0-444-86095-8.50012-4 ↗
2. E. Guerrero, H. P�tzl, R. Tielert, M. Grasserbauer, G. Stingeder: Generalized model for the clustering of as dopants in Si, J. Electrochem. Soc. 129, 1826 (1982)10.1149/1.2124302 ↗
3. S.M. Hu, S. Schmidt: Interactions in sequential diffusion processes in semiconductors, J. Appl. Phys. 39, 4272 (1968)10.1063/1.1656960 ↗
4. J.R. King: D. Phil. thesis, Oxford Univ., England (1986)
5. J.R. King: High concentration arsenic diffusion in crystalline silicon ? an asymptotic analysis, IMA J. Appl. Math. No. 5 (1987)10.1093/imamat/38.2.87 ↗
6. J.R. King, C.P. Please: Diffusion of dopant in crystalline silicon ? an asymptotic analysis, IMA J. Appl. Math. 37, 185 (1986)10.1093/imamat/37.3.185 ↗
7. A.F.W. Willoughby: Double-diffusion processes in silicon, in Impurity Doping Processes in Silicon, ed. by F.F.Y. Wang (North-Holland, New York 1981) pp. 1?53
8. J.F. Ziegler, G.W. Cole, J.E.E. Baglin: Discovery of anomalous base regions in transistors, Appl. Phys. Lett. 21, 177 (1972)10.1063/1.1654333 ↗