Capacitance spectroscopic study of the Si/HF-electrolyte interface

Thep-Si/HF-electrolyte interface was characterized by capacitance–voltage (C–V) and current–voltage (I–V) studies. At low frequency, the measured capacitance exhibits two maxima: one in the weak accumulation regime (around 0.8 V [SCE]) and the other in the strong accumulation regime (around 2.6 V [SCE]), both of which disappear at high frequency. The disappearance of the two capacitance maxima is attributed to the slow response of interface traps to high frequencies. The flat-band potential, VFB, is found to be frequency dependent. The surface state densities corresponding to the two capacitance maxima are estimated to be 3.2×1011 cm-2 and 2.4×1011 cm-2, respectively. The in situ I–V characteristics distinguish pore formation, transition and electropolishing regions. Porous Si synthesized at 50 mA cm-2 gives a broad photoluminescence peak around 2.04 eV at 300 K.