Delineation of a p-n junction using dC/dX imagery produced by shear-mode scanning capacitance microscopy
Source abstract
Abstract
Using a laterally oscillating all-metallic probe, a scanning capacitance microscope (SCM) has been used to yield an image of the spatial derivative of the local capacitance, dC/dX, where C and X are the local capacitance and the axis of the probe tip locus on the sample surface, respectively. Bias fields, except for the ultra-high-frequency fields used for sensing the capacitance, are not necessary to detect the dC/dX signal, which yields an image delineating clearly the depletion region due to the p–n junction. Simultaneously with the dC/dX image, the new SCM can give images of topography and dC/dV if an alternating field V is applied between the probe and sample.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Force Microscopy Techniques and Applications · Integrated Circuits and Semiconductor Failure Analysis · Near-Field Optical Microscopy
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References
Reference metadata was not supplied for this record.