Comparative study of heteroepitaxial domain growth Mg0.4Zn0.6O alloy films on LaAlO3 and MgO substrates
Source abstract
Abstract
Cubic-phase heteroepitaxial domain Mg0.4Zn0.6O films have been realized on both LaAlO3(100) and MgO (100) substrates using pulsed laser deposition. Different domain matching epitaxy relationships were obtained due to the different lattice mismatch between the films and substrates. A 45° rotated diagonal domain growth (2 diagonal units of Mg0.4Zn0.6O to 3 units of LAO) results in a mismatch of less than 2%. Meanwhile a perfectly matched cube-on-cube relationship is demonstrated in the Mg0.4Zn0.6O/MgO structure. X-ray diffraction confirms that substrates have little effects on the lattice parameters of the Mg0.4Zn0.6O films.
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Research context
OpenAlex topics: ZnO doping and properties · Magnetic and transport properties of perovskites and related materials · Electronic and Structural Properties of Oxides
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References (18)
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1. J. Huso, J.L. Morrison, H. Hoeck, X.B. Chen, L. Bergman, S.J. Jokela, M.D. McCluskey, T. Zheleva, Appl. Phys. Lett. 89, 171909 (2006)10.1063/1.2369917 ↗
2. R.S. Grund, A. Carstens, B. Rheinländer, D. Spemann, H. Hochmut, G. Zimmermann, M. Lorenz, M. Grundmann, C.M. Herzinger, M. Schubert, J. Appl. Phys. 99, 123701 (2006)10.1063/1.2205350 ↗
3. C.X. Cong, B. Yao, Q.J. Zhou, J.R. Chen, J. Phys. D 41, 105303 (2008)10.1088/0022-3727/41/10/105303 ↗
4. J.M. Qin, B. Yao, X.P. Jia, C.X. Shan, J.Y. Zhang, H.A. Ma, D.Z. Shen, J. Phys. D 41, 155408 (2008)10.1088/0022-3727/41/15/155408 ↗
5. I. Takeuchi, W. Yang, K.S. Chang, M.A. Aronova, T. Venkatesan, R.D. Vispute, L.A. Bendersky, J. Appl. Phys. 94, 7336 (2003)10.1063/1.1623923 ↗
6. N.B. Chen, C.H. Sui, Mater. Sci. Eng. B 126, 16 (2006)10.1016/j.mseb.2005.08.112 ↗
7. C.H. Bates, W.B. White, R. Roy, Science 137, 933 (1962)10.1126/science.137.3534.993 ↗
8. L.A. Bendersky, I. Takeuchi, K.S. Chang, W. Yang, S. Hullavarad, R.D. Vispute, J. Appl. Phys. 98, 083526 (2005)10.1063/1.2061887 ↗
9. D.X. Zhao, Y.C. Liu, D.Z. Shen, Y.M. Lu, J.Y. Zhang, X.W. Fan, J. Appl. Phys. 90, 5561 (2001)10.1063/1.1413948 ↗
10. S. Choopun, R.D. Vispute, W. Yang, R.P. Sharma, T. Venkatesan, H. Shen, Appl. Phys. Lett. 80, 1529 (2002)10.1063/1.1456266 ↗
11. C. Bundesmann, M. Schubert, A. Rahm, D. Spemann, H. Hochmuth, M. Lorenz, M. Grundmann, Appl. Phys. Lett. 85, 905 (2004)10.1063/1.1777797 ↗
12. Z.P. Wei, B. Yao, Z.Z. Zhang, Y.M. Lu, D.Z. Shen, B.H. Li, X.H. Wang, J.Y. Zhang, Z.K. Tang, Appl. Phys. Lett. 89, 102104 (2006)10.1063/1.2345846 ↗
13. W.I. Park, G.C. Yi, H.M. Jang, Appl. Phys. Lett. 79, 2022 (2001)10.1063/1.1405811 ↗
14. J. Chen, W.Z. Shen, N.B. Chen, D.J. Qiu, H.Z. Wu, J. Phys., Condens. Matter 15, L475 (2003)10.1088/0953-8984/15/30/102 ↗
15. L. Zhuang, K.H. Wong, Thin Solid Films 516, 5607 (2008)10.1016/j.tsf.2007.07.110 ↗
16. A. Ohtomo, M. Kawasaki, T. Koida, K. Masubuchi, H. Koinuma, Y. Sakurai, Y. Yoshida, T. Yasuda, Y. Segawa, Appl. Phys. Lett. 72, 2466 (1998)10.1063/1.121384 ↗
17. K. Matsubara, H. Tampo, H. Shibata, A. Yamada, P. Fons, K. Iwata, S. Niki, Appl. Phys. Lett. 85, 1374 (2004)10.1063/1.1784544 ↗
18. L. Zhuang, K.H. Wong, G.K.H. Pang, Appl. Phys. A 89, 543 (2007)10.1007/s00339-007-4121-7 ↗