Competitive emissions of InAs (QDs)/GaInAsP/InP grown by GSMBE
Source abstract
Abstract
In this letter, the optical properties of InAs (QDs)/GaInAsP on InP substrate grown by gas source molecular beam epitaxy are investigated. By measuring and analyzing the photoluminescence spectra of InAs (QDs)/GaInAsP/InP at different temperatures and excitation powers, the origin of each emission is verified. And it is found that, with the temperature increasing, the emission intensity of GaInAsP wetting layers decreases firstly (T < 150 K) and then increases from 160 K to room temperature. By analyzing the experimental results of three samples with different QDs’ sizes, a competitive emission between InAs QDs and GaInAsP wetting layers is confirmed.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials · Quantum Dots Synthesis And Properties
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References (30)
Show source-provided references
1. L. Landin, M. Borgstrom, M. Kleverman, M.E. Pistol, L. Samuelson, W. Seifert, X.H. Zhang, Thin Solid Films 364, 161 (2000)10.1016/S0040-6090(99)00910-4 ↗
2. D.I. Lubyshev, P.P. GonzalezBorrero, E. Marega, E. Petitprez, N. LaScala, P. Basmaji, Appl. Phys. Lett. 68, 205 (1996)10.1063/1.116461 ↗
3. Q.B. Zhang, W.S. Wei, Appl. Phys. A 113, 75–82 (2013)10.1007/s00339-013-7826-9 ↗
4. E. Jaschinski, M. Wehner, Appl. Phys. A 107, 691–696 (2012)10.1007/s00339-012-6855-0 ↗
5. S.G. Li, Q. Gong, Y.F. Lao, K. He, J. Li, Y.G. Zhang, S.L. Feng, H.L. Wang, Appl. Phys. Lett. 93, 111109 (2008)10.1063/1.2985900 ↗
6. D.L. Huffaker, G. Park, Z. Zou, O.B. Shchekin, D.G. Deppe, Appl. Phys. Lett. 73, 2564–2566 (1998)10.1063/1.122534 ↗
7. J. Park, N.J. Kim, Y.D. Jang, E.G. Lee, J.M. Lee, J.S. Baek, J.H. Kim, H.S. Lee, K.J. Yee, D. Lee, S.H. Pyun, W.G. Jeong, J. Kim, Appl. Phys. Lett. 98, 011107 (2011)10.1063/1.3533365 ↗
8. R.P. Mirin, J.P. Ibbetson, K. Nishi, A.C. Gossard, J.E. Bowers, Appl. Phys. Lett. 67, 3795 (1995)10.1063/1.115386 ↗
9. V.M. Ustinov, N.A. Maleev, A.E. Zhukov, A.R. Kovsh, A.Y. Egorov, A.V. Lunev, B.V. Volovik, I.L. Krestnikov, Y.G. Musikhin, N.A. Bert, P.S. Kop’ev, Z.I. Alferov, N.N. Ledentsov, D. Bimberg, Appl. Phys. Lett. 74, 2815 (1999)10.1063/1.124023 ↗
10. Q. Gong, R. Notzel, P.J. van Veldhoven, T.J. Eijkemans, J.H. Wolter, Appl. Phys. Lett. 84, 275–277 (2004)10.1063/1.1640474 ↗
11. S.G. Li, Q. Gong, Y.F. Lao, H.D. Yang, S. Gao, P. Chen, Y.G. Zhang, S.L. Feng, H.L. Wang, Appl. Phys. Lett. 95, 251111 (2009)10.1063/1.3278594 ↗
12. C. Paranthoen, N. Bertru, O. Dehaese, A. Le Corre, S. Loualiche, B. Lambert, G. Patriarche, Appl. Phys. Lett. 78, 1751 (2001)10.1063/1.1356449 ↗
13. S. Fafard, Z. Wasilewski, J. McCaffrey, S. Raymond, S. Charbonneau, Appl. Phys. Lett. 68, 991 (1996)10.1063/1.116122 ↗
14. S. Yoon, Y. Moon, T.W. Lee, E. Yoon, Y.D. Kim, Appl. Phys. Lett. 74, 2029 (1999)10.1063/1.123746 ↗
15. N. Carlsson, T. Junno, L. Montelius, M.E. Pistol, L. Samuelson, W. Seifert, J. Cryst. Growth 191, 347 (1998)10.1016/S0022-0248(98)00143-2 ↗
16. Q. Gong, R. Notzel, P.J. van Veldhoven, T.J. Eijkemans, J.H. Wolter, Appl. Phys. Lett. 85, 1404 (2004)10.1063/1.1785859 ↗
17. L.M. Kong, Z.Y. Wu, Z.C. Feng, I.T. Ferguson, J. Appl. Phys. 101, 126101 (2007)10.1063/1.2745410 ↗
18. L.P. Tilly, H.G. Grimmeiss, P.O. Hansson, Phys. Rev. B 47, 1249–1253 (1993)10.1103/PhysRevB.47.1249 ↗
19. E.A. Katz, R.M. Biefeld, R.L. Gunshor, R.J. Malik, Proc. Mat. Res. Soc. Symp. 216, 353–358 (1991)
20. Z.M. Fang, K.Y. Ma, D.H. Jaw, R.M. Cohen, G.B. Stringfellow, J. Appl. Phys. 67, 7034 (1990)10.1063/1.345050 ↗
21. B.L. Liu, Z.Y. Xu, H.Y. Liu, Z.G. Wang, J. Cryst. Growth 220, 51–55 (2000)10.1016/S0022-0248(00)00770-3 ↗
22. R. Benzaquen, S. Charbonneau, N. Sawadsky, A.P. Roth, R. Leonelli, L. Hobbs, G. Knight, J. Appl. Phys. 75, 2633 (1994)10.1063/1.356239 ↗
23. K. Satzke, G. Weiser, R. Hoger, W. Thulke, J. Appl. Phys. 63, 5485 (1988)10.1063/1.340373 ↗
24. Y. Yamazoe, T. Nishino, Y. Hamakawa, IEEE J. Quantum Electron 17, 139 (1981)10.1109/JQE.1981.1071081 ↗
25. P.H. Tan, Z.Y. Xu, X.D. Luo, W.K. Ge, Y. Zhang, A. Mascarenhas, H.P. Xin, C.W. Tu, Appl. Phys. Lett. 90, 061905 (2007)10.1063/1.2454552 ↗
26. X.D. Luo, C.Y. Hu, Z.Y. Xu, H.L. Luo, Y.Q. Wang, J.N. Wang, W.K. Ge, Appl. Phys. Lett. 81, 3795 (2002)10.1063/1.1521250 ↗
27. X.D. Luo, Z.Y. Xu, W.K. Ge, Z. Pan, L.H. Li, Y.W. Lin, Appl. Phys. Lett. 79, 958 (2001)10.1063/1.1390484 ↗
28. T. Ishikawa, J.E. Bowers, IEEE J. Quantum Electron 30, 562 (1994)10.1109/3.283804 ↗
29. A. Mathew, U. Verma, S. Chakrabarti, Appl. Phys. A 113, 215–220 (2013)10.1007/s00339-012-7521-2 ↗
30. Y.K. Kuo, S.H. Yen, M.W. Yao, M.L. Chen, B.T. Liou, Opt. Commun. 275, 156 (2007)10.1016/j.optcom.2007.02.025 ↗