The role of H-plasma on aluminum-induced crystallization of amorphous silicon
Source abstract
Abstract
We propose a technique to improve and accelerate aluminum-induced crystallization (AIC) by hydrogen plasma. Raman spectroscopy and secondary ion mass spectrometry of crystallized poly-silicon thin films show that hydrogen plasma radicals reduce the crystallization time of AIC. This technique shortens the annealing time from 10 to 4 h and increases the Hall mobility from 22 to 42 cm2/V s. The possible mechanism of AIC assisted by hydrogen radicals is also discussed.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Ion-surface interactions and analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (14)
Show source-provided references
1. M.A. Crowder, M. Moriguchi, Y. Mitani, A.T. Voutsas, Parametric investigation of SLS-processed poly-silicon thin films for TFT applications. Thin Solid Films 427, 101–107 (2003)10.1016/S0040-6090(02)01147-1 ↗
2. L. Carnel, I. Gordon, D. Van Gestel, K. Van Nieuwenhuysen, G. Agostinelli, G. Beaucarne, J. Poortmans, Thin-film polycrystalline silicon solar cells on ceramic substrates with a Voc above 500 mV. Thin Solid Films 511, 21–25 (2006)10.1016/j.tsf.2005.12.069 ↗
3. G.J. Qi, S. Zhang, T.T. Tang, J.F. Li, X.W. Sun, X.T. Zeng, Experimental study of aluminum-induced crystallization of amorphous silicon thin films. Surf Coat Technol 198, 300–303 (2005)10.1016/j.surfcoat.2004.10.092 ↗
4. E. Pihan, A. Slaoui, C. Maurice, Growth kinetics and crystallographic properties of poly-silicon thin films formed by aluminium-induced crystallization. J Cryst Growth 305, 88–98 (2007)10.1016/j.jcrysgro.2007.02.039 ↗
5. Andrey Sarikov, Jens Schneider, Martin Muske, Ina Sieber, Stefan Gall, A model of preferential (100) crystal orientation of Si grains grown by Aluminium-induced layer-exchange process. Thin Solid Films 515, 746 (2007)
6. H. Sugimoto, M. Tajima, T. Eguchi, I. Yamaga, T. Saitoh Stefan, K. Estreicher, Photoluminescence analysis of intra-grain defects in cast-grown polycrystalline silicon wafers. Mater Sci Semicond Process 9, 102 (2006)10.1016/j.mssp.2006.01.033 ↗
7. G.J. Qi, S. Zhang, T.T. Tang, J.F. Li, X.W. Sun, X.T. Zeng, Experimental study of aluminum-induced crystallization of amorphous silicon thin films. Surf Coat Technol 198, 300–303 (2005)10.1016/j.surfcoat.2004.10.092 ↗
8. S.K. Estreicher, Hydrogen-related defects in crystalline semiconductors: a theorist’s perspective. Mater Sci Eng R14, 319 (1995)10.1016/0927-796X(95)00178-6 ↗
9. H. Sugimoto, M. Tajima, T. Eguchi, I. Yamaga, T. Saitoh Stefan, K Estreicher, Photoluminescence analysis of intra-grain defects in cast-grown polycrystalline silicon wafers. Mater Sci Semicond Process 9, 102–106 (2006)10.1016/j.mssp.2006.01.033 ↗
10. P. Lengsfeld, H. Norbert, Nickel structural and electronic properties of laser-crystallized poly-Si. Semicond Semimet 75, 119 (2003)10.1016/S0080-8784(03)75005-4 ↗
11. J. Schneider, J Non-cryst Solids 338–340, 127 (2004)10.1016/j.jnoncrysol.2004.02.036 ↗
12. P. Rozenak, B. Ladna, H.K. Birnbaum, SIMS study of deuterium distribution in chemically charged aluminum containing oxide layer defects and trapping sites. USA J Alloys Compd 415, 134 (2006)10.1016/j.jallcom.2005.08.031 ↗
13. J.I.N. Hao, K.J. Weber, Weitang Li, A.W. Blakers, Introduction of atomic H into Si3N4/SiO2/Si stacks. Rare Met 25, 150 (2006)10.1016/S1001-0521(07)60063-1 ↗
14. C. Ornaghi, G. Beaucarne, J. Poortmans, J. Nijs, R. Mertens, Aluminum-induced crystallization of amorphous silicon: influence of materials characteristics on the reaction. Thin Solid Films 451–452, 476 (2003)