Quantum and transport scattering times in modulation-doped AlxGa1-xN/GaN single quantum wells
Source abstract
Abstract
Quantum and transport scattering times related to different subbands in modulation-doped Al0.22Ga0.78N/GaN single quantum wells (SQW) have been studied by magnetotransport measurements. The quantum scattering time related to the first and the second subbands is determined to be 0.078 ps and 0.088 ps, respectively, at 1.5 K. Results indicate that the scatterings from heterointerface and ionized donors at both side of GaN well are all important in limiting quantum scattering time. By using mobility spectrum technique the transport scattering time related to the first subband is determined to be 0.128 ps. Transport-to-quantum scattering time ratio in the first subband is 1.6. It is concluded the large angle scatterings play a very important role in limiting quantum scattering time in this SQW.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (18)
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