Fabrication, morphologies and structural characterization of InN nanowire arrays

Large-scale, uniform diameter, and high-aligned metal indium was first introduced into the nanochannels of anodic aluminum membrane by electrochemical deposition. InN nanowires were achieved by the reaction of indium vapor with a constant flowing ammonia atmosphere. X-ray diffraction, scanning electron microscopy, and transmission electron microscopy were used to measure the size and structure of the sample. The results show that InN nanowires were aligned in the nanochannels of the template and the diameters were about 40 nm. Raman-scattering spectrum of InN nanowire array is presented. The $${ A}₁$$ (TO), $${ E}₁$$ (TO), and $${ E}₂$$ (high) phonon frequencies at 440, 472, and 490 cm $$^-1$$ were observed. The Raman spectrum of the InN nanowire arrays is consistent with the hexagonal wurtzite structure bulk InN, in agreement with X-ray diffraction observation.