Simulation of boron diffusion during low-temperature annealing of implanted silicon
Source abstract
Abstract
Modeling of ion-implanted boron redistribution in silicon crystals during low-temperature annealing with a small thermal budget has been carried out. It was shown that formation of "tails"' in the low-concentration region of impurity profiles occurs due to the long-range migration of boron interstitials
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Silicon and Solar Cell Technologies · Advanced Materials and Semiconductor Technologies · Semiconductor materials and interfaces
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References (26)
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