Photoluminescence characteristics of 1.5-μm Ga1-xInxNyAs1-y/GaAs structures grown by molecular beam epitaxy
Source abstract
Abstract
We report the photoluminescence characteristics of molecular beam epitaxy grown GaInNAs/GaAs single quantum wells that emit near 1.5-μm wavelength at room temperature. The photoluminescence properties were investigated by varying the excitation wavelength, excitation intensity and sample temperature. It is found that the spectroscopic properties in the 1.5-μm material are quite different from those of similar GaInNAs/GaAs structures emitting at 1.2 μm. The related radiative mechanisms in the 1.5-μm samples are interpreted in terms of the optical transitions of phase-separated quantum-dot states rather than quantum-well states.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials · GaN-based semiconductor devices and materials
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