Experimental study of resistive bistability in metal oxide junctions
Source abstract
Abstract
We have studied resistive bistability (memory) effects in junctions based on metal oxides, with a focus on sample-to-sample reproducibility which is necessary for the use of such junctions as crosspoint devices of hybrid CMOS/nanoelectronic circuits. Few-nm-thick layers of NbOx, CuOx and TiOx have been formed by thermal and plasma oxidation, at various deposition and oxidation conditions, both with or without rapid thermal post-annealing (RTA). The resistive bistability effect has been observed for all these materials, with particularly high endurance (over 1000 switching cycles) obtained for single-layer TiO2 junctions, and the best reproducibility reached for multi-layer junctions of the same material. Fabrication optimization has allowed us to improve the OFF/ON resistance ratio to about 1000, but the sample-to-sample reproducibility is so far lower than that required for large scale integration.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Semiconductor materials and devices · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (30)
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