journal article·2001-10

On the migration of defects and impurities in microelectromechanical systems subject to a large number of light pulses

M. Wautelet, J.P. Dauchot, M. Hecq

Applied Physics A· Volume 73· Issue 4
Publisher page

Abstract

The migration of defects in light-irradiated microelectromechanical systems (MEMS) is treated theoretically. The effects of temperature gradients on atomic demixing are considered. It is found that, when the migration energy of defects and impurities is less than about 0.5 eV, their migration has to be introduced in the modelling of ageing of MEMS.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Advanced MEMS and NEMS Technologies · Mechanical and Optical Resonators · Laser Material Processing Techniques

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References

Reference metadata was not supplied for this record.