journal article·1981-11

Thermal annealing and light irradiation effects on hole and electron drift mobilities of Se93.5As6.5 and Se94.3Ge5.7 films

T. Takahashi, M. Ichikawa, T. Fujita, T. Hirai

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Glass properties and applications

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References (14)

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