journal article·1985-09

Position dependence of average electron velocity in a submicrometer GaAs channel

B. R. Nag, M. Deb Roy

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Research context

OpenAlex topics: Semiconductor Quantum Structures and Devices · Advancements in Semiconductor Devices and Circuit Design · GaN-based semiconductor devices and materials

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References (14)

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1. J.G. Ruch: IEEE Trans. ED-19, 652 (1972)10.1109/T-ED.1972.17468 ↗
2. T.J. Maloney, J. Frey: J. Appl. Phys.48, 781 (1977)10.1063/1.323670 ↗
3. H. Rees, G.S. Sanghera, R.A. Warriner: Electron. Lett.13, 156 (1977)10.1049/el:19770111 ↗
4. B.R. Nag, M. Deb Roy: Appl. Phys. A31, 65 (1983)10.1007/BF00616306 ↗
5. M. Brauer: Phys. Stat. Sol. (b)81, 147 (1977)10.1002/pssb.2220810113 ↗
6. G. Hill, P.N. Robson, A. Mejerfeld, W. Fawcett: Electron. Lett.13, 235 (1977)10.1049/el:19770171 ↗
7. Y. Awano, K. Tomizawa, N. Hashizume, M. Kawashima: Electron. Lett.18, 133 (1982)10.1049/el:19820089 ↗
8. J. Zimmerman, E. Constant: Solid-State Electron.23, 915 (1980)10.1016/0038-1101(80)90056-8 ↗
9. S. Kratzer, J. Frey: J. Appl. Phys.49, 4064 (1978)10.1063/1.325366 ↗
10. M.S. Shur, L.F. Eastman: IEEE Trans. ED-26, 1677 (1979)10.1109/T-ED.1979.19671 ↗
11. M.S. Shur, L.F. Eastman: Solid-State Electron.24, 11 (1981)10.1016/0038-1101(81)90207-0 ↗
12. K. Hess: IEEE Trans. ED-28, 937 (1981)10.1109/T-ED.1981.20462 ↗
13. T.H. Glisson, C.K. Williams, J.R. Hauser, M.A. Littlejohn:VISI Electronics: Microstructure Science (Academic, New York 1982) p. 99
14. D.K. Ferry, J. Zimmerman, P. Lugli, H. Grubin: IEEE Electron. Dev. Lett. EDL-2, 228 (1981)10.1109/EDL.1981.25413 ↗