journal article·1998-09-01

Reflection high-energy electron diffraction real-time monitoring of an etch process implemented in molecular beam epitaxy technology: hydrogen chloride versus GaAs(001) epilayers

A. Hamoudi, T. Sogawa, T. Saitoh, J. Yumoto

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OpenAlex topics: Electron and X-Ray Spectroscopy Techniques · Semiconductor materials and devices · Advancements in Photolithography Techniques

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